All IGBT Datasheet

 

GT20J301 IGBT (IC) Datasheet. Cross Reference Search. GT20J301 Equivalent

Type Designator: GT20J301

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 130W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 300

Maximum collector capacity (Cc), pF:

Package: TOP3

GT20J301 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT20J301 PDF doc:

4.1. gt20j321_en_wm_20061101.pdf Size:216K _toshiba

GT20J301
GT20J301

GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J321 High Power Switching Applications Unit: mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 ?s (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low

See also transistors datasheet: GT15Q101 , GT15Q301 , GT15Q311 , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , IRG4PC50UD , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 .

Search Terms:

 GT20J301 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


GT20J301
  GT20J301
  GT20J301
  GT20J301
 
GT20J301
  GT20J301
  GT20J301
  GT20J301
 

social 

LIST

Last Update

IGBT: STGWT60V60DF | STGWT60H65FB | STGWT60H65DFB | STGWT60H60DLFB | STGWT28IH125DF | STGWA60H65DFB | STGWA25S120DF3 | STGWA25H120F2 | STGWA25H120DF2 | STGW60V60F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers