IKP15N60T IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IKP15N60T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 130W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220

Equivalent transistors for IKP15N60T

IKP15N60T PDF document for downloads:

1.1. ikp15n60trev2_2g[1].pdf Size:454K _infineon

IKP15N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G E • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior PG-TO-220-3-1 - very high switching speed • Positive temperature coefficient in VCE(sat) • Low EMI • Pb-free lead plating; RoHS compliant • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IKP15N60T 600V 15A 1.5V K15T60 PG-TO-220-3-1 175°C Maximum Ratings Parame

See also transistors datasheet: IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T , IKP10N60T , IRG4PH50UD , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 .

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