SKP15N60 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SKP15N60

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 139W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 31A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220

Equivalent transistors for SKP15N60

SKP15N60 PDF document for downloads:

1.1. skp15n60_skw15n60_rev2_3g.pdf Size:371K _infineon

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 PG-TO-220-3-1 - parallel switching capability (TO-220AB) • Very soft, fast recovery anti-parallel EmCon diode • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat) Tj Marking Package SKP15N60 600V 15A 2.3V K15N60 PG-TO-220-3-1 150°C SKW15N60 600V 15A 2.3V K15N60 PG-TO-247-3 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current IC A

See also transistors datasheet: IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 , SKP10N60A , HGTG20N60A4 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 .

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