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IHY20N120R3 IGBT (IC) Datasheet. Cross Reference Search. IHY20N120R3 Equivalent

Type Designator: IHY20N120R3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 310W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 1.48V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247HC-3

IHY20N120R3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IHY20N120R3 PDF doc:

1.1. ds_ihy20n120r3_2_1.pdf Size:916K _infineon

IHY20N120R3
IHY20N120R3

IHY20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only G E • TrenchStop® technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperatur

3.1. ihy20n135r3_2_1.pdf Size:1484K _infineon

IHY20N120R3
IHY20N120R3

IH-series Reverse conducting IGBT with monolithic body diode IHY20N135R3 Datasheet Industrial & Multimarket IHY20N135R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Offers new higher breakdown voltage to 1350V for improved reliability • Powerful monolithic body diode with low forward voltage G designed for soft commutation only E • TrenchStopTM tech

See also transistors datasheet: SKP04N60 , SKP06N60 , SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , FII50-12E , IHY30N160R2 , IKW15N120H3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R .

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IGBT: STGWT60V60DF | STGWT60H65FB | STGWT60H65DFB | STGWT60H60DLFB | STGWT28IH125DF | STGWA60H65DFB | STGWA25S120DF3 | STGWA25H120F2 | STGWA25H120DF2 | STGW60V60F |

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