IKW15N120H3 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IKW15N120H3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 217W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.05V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IKW15N120H3

IKW15N120H3 PDF document for downloads:

1.1. ikw15n120t2_rev2_1.pdf Size:380K _infineon

IKW15N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode C • Short circuit withstand time – 10µs • Designed for : - Frequency Converters G E - Uninterrupted Power Supply • TrenchStop® 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • Easy paralleling capability due to positive temperature coefficient PG-TO-247-3 in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IKW15N120T2 1200V 15A 1.75V K15T1202 PG-TO-247-3 175°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter v

1.2. ikw15n120h3_rev1_2g.pdf Size:828K _infineon

IKW15N120H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features: TRENCHSTOPTM technology offering • very low V CEsat G E • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • uninterruptible power supplies • welding converters • converters with high switching frequency Type V I V , T =25°C T Marking Package Type V I V , T =25°C T Marking Package Type VV II VV , =25°C TT Marking Package Type , TT =25°C Marking Package IKW15N120H3 1200V 15A 2.05V 175°C K15H1203 PG-TO247-3 Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 V DC collector current, limited by T T = 25°C I 30.0 A T = 100°C 15.0 Puls

5.1. ikw15t120_rev2g_3.pdf Size:364K _infineon

IKW15T120 TrenchStop® Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D • Short circuit withstand time – 10µs G E • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution PG-TO-247-3 - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IKW15T120 1200V 15A

See also transistors datasheet: SKP10N60A , SKP15N60 , IKP01N120H2 , IKP03N120H2 , SKP02N120 , IHY15N120R3 , IHY20N120R3 , IHY30N160R2 , IHY20N120R3 , IKW25N120H3 , IKW40N120H3 , IKD10N60R , IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R .

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