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IKW30N60H3 IGBT (IC) Datasheet. Cross Reference Search. IKW30N60H3 Equivalent

Type Designator: IKW30N60H3

Marking Code: K30H603

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 187W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.95V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247

IKW30N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IKW30N60H3 PDF doc:

1.1. ikw30n60h3_rev1_2g.pdf Size:1641K _infineon

IKW30N60H3
IKW30N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW30N60H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features: TRENCHS

1.2. ikw30n60h3.pdf Size:2114K _igbt_a

IKW30N60H3
IKW30N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IKW30N60H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features: TRE

2.1. ikw30n60trev2_3g.pdf Size:899K _infineon

IKW30N60H3
IKW30N60H3

IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fieldstop technology f

2.2. ikw30n60t.pdf Size:571K _igbt_a

IKW30N60H3
IKW30N60H3

IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G E  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterruptible Power Supply  TRENCHSTOP

See also transistors datasheet: IKU10N60R , IKD15N60R , IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , FGH40N60UFD , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF .

Search Terms:

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