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IHW30N110R3 IGBT (IC) Datasheet. Cross Reference Search. IHW30N110R3 Equivalent

Type Designator: IHW30N110R3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 333W

Maximum collector-emitter voltage |Uce|, V: 1100V

Collector-emitter saturation voltage |Ucesat|, V: 1.55V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IHW30N110R3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IHW30N110R3 PDF doc:

1.1. ihw30n110r3_1_2.pdf Size:1646K _infineon

IHW30N110R3
IHW30N110R3

IGBT Reverse conducting IGBT with monolithic body diode IHW30N110R3 1100V TRENCHSTOPTM IH-Series for Soft Switching Applications Data sheet Industrial & Multimarket IHW30N110R3 TRENCHSTOPTM IH-Series for Soft Switching Applications Reverse conducting IGBT with monolithic body diode C Features: Powerful monolithic body diode with low forward voltage designed for soft commutation only

1.2. ihw30n110r3.pdf Size:2166K _igbt_a

IHW30N110R3
IHW30N110R3

Induction Heating Series Reverse conducting IGBT with monolithic body diode IHW30N110R3 Data sheet Industrial Power Control IHW30N110R3 Induction Heating Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • Very tight parameter distribution • High ruggedness, tempe

3.1. ihw30n100t_rev2_7.pdf Size:313K _infineon

IHW30N110R3
IHW30N110R3

IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications G E offers : - very tight parameter distribution - high ruggedness, temperature sta

3.2. ihw30n100r_rev2_2.pdf Size:324K _infineon

IHW30N110R3
IHW30N110R3

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C G E Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio

3.3. ihw30n120r2_rev1_5g.pdf Size:360K _infineon

IHW30N110R3
IHW30N110R3

IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology

3.4. ihw30n160r2_rev2_1g.pdf Size:391K _infineon

IHW30N110R3
IHW30N110R3

IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT t

3.5. ihw30n120r2.pdf Size:579K _igbt_a

IHW30N110R3
IHW30N110R3

 IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with very low forward voltage • Body diode clamps negative voltages TM • TrenchStop and Fieldstop technology for 1200V applications G E offers : - very tight parameter distribution - high ruggedness, temperature stable behavior

3.6. ihw30n100r.pdf Size:324K _igbt_a

IHW30N110R3
IHW30N110R3

 IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C G E • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st

3.7. ihw30n120r3.pdf Size:1983K _igbt_a

IHW30N110R3
IHW30N110R3

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TRENCHSTOPTM technology offering: - very tight parameter d

3.8. ihw30n100t.pdf Size:313K _igbt_a

IHW30N110R3
IHW30N110R3

 IHW30N100T Soft Switching Series q ® Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C ® • TrenchStop and Fieldstop technology for 1000 V applications G E offers : - very tight parameter distribution - high ruggedness, tem

3.9. ihw30n135r3.pdf Size:1984K _igbt_a

IHW30N110R3
IHW30N110R3

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features: • Offers new higher breakdown voltage to 1350V for improved reliability • Powerful monolithic body diode with low forward voltage designed for soft commu

3.10. ihw30n160r2.pdf Size:391K _igbt_a

IHW30N110R3
IHW30N110R3

 IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior

See also transistors datasheet: IKU15N60R , IKD04N60R , IKU04N60R , IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IRG4BC40U , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 .

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