GT25H101 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT25H101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 500V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 25A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1000

Maximum collector capacity (Cc), pF:

Package: TOP3

Equivalent transistors for GT25H101

GT25H101 PDF document for downloads:

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See also transistors datasheet: GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , IRG4PC50W , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 .

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