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IKW50N60H3 IGBT (IC) Datasheet. Cross Reference Search. IKW50N60H3 Equivalent

Type Designator: IKW50N60H3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 333W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.85V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 100A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IKW50N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IKW50N60H3 PDF doc:

1.1. ikw50n60h3_rev1_1g.pdf Size:1642K _infineon

IKW50N60H3
IKW50N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW50N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat • low

2.1. ikw50n60trev2_4g.pdf Size:412K _infineon

IKW50N60H3
IKW50N60H3

IKW50N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G E • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for

See also transistors datasheet: IKD06N60R , IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , SKA06N60 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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