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IKP20N60H3 IGBT (IC) Datasheet. Cross Reference Search. IKP20N60H3 Equivalent

Type Designator: IKP20N60H3

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 170W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.95V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220

IKP20N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IKP20N60H3 PDF doc:

1.1. ikp20n60h3_rev1.1g.pdf Size:1698K _infineon

IKP20N60H3
IKP20N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKP20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering very low V CEsat low

1.2. ikp20n60h3.pdf Size:1648K _igbt_a

IKP20N60H3
IKP20N60H3

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKP20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKP20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat

2.1. ikp20n60t_ikw20n60t_rev2_5g.pdf Size:449K _infineon

IKP20N60H3
IKP20N60H3

IKP20N60T TrenchStop Series IKW20N60T Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technolo

2.2. ikp20n60t.pdf Size:561K _igbt_a

IKP20N60H3
IKP20N60H3

IKP20N60T TRENCHSTOP™ Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ a

See also transistors datasheet: IKU06N60R , IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , RJP63F3DPP-M0 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 .

Search Terms:

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