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IHY20N135R3 IGBT (IC) Datasheet. Cross Reference Search. IHY20N135R3 Equivalent

Type Designator: IHY20N135R3

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 310W

Maximum Collector-Emitter Voltage |Vce|, V: 1350V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 40A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247HC-3

IHY20N135R3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IHY20N135R3 PDF doc:

1.1. ihy20n135r3_2_1.pdf Size:1484K _infineon

IHY20N135R3
IHY20N135R3

IH-series Reverse conducting IGBT with monolithic body diode IHY20N135R3 Datasheet Industrial & Multimarket IHY20N135R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Offers new higher breakdown voltage to 1350V for improved reliability • Powerful monolithic body diode with low forward voltage G designed for soft commutation only E • TrenchStopTM tech

3.1. ds_ihy20n120r3_2_1.pdf Size:916K _infineon

IHY20N135R3
IHY20N135R3

IHY20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only G E • TrenchStop® technology offering: - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperatur

See also transistors datasheet: IKW20N60H3 , IKW30N60H3 , IHW40N60RF , IHW30N110R3 , IKW40N60H3 , IKB20N60H3 , IKW50N60H3 , IKP20N60H3 , 10N50E1D , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , SGB02N120 , SGD02N120 , SGD02N60 .

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IGBT: IXYH30N65C3H1 | IXYH30N65C3 | IXYH30N65B3D1 | IXYH30N450HV | IXYH30N170C | IXYH24N90C3D1 | IXYH24N90C3 | IXYH20N65C3 | IXYH20N65B3 | IXYH120N65C3 |

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