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SGB02N120 IGBT (IC) Datasheet. Cross Reference Search. SGB02N120 Equivalent

Type Designator: SGB02N120

Marking Code: GB02N120

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 62W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.7V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 6.2A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: D2PAK(TO263)

SGB02N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGB02N120 PDF doc:

1.1. sgb02n120_rev2_3.pdf Size:433K _infineon

SGB02N120
SGB02N120

SGB02N120 Fast IGBT in NPT-technology C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: G E - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Qualified according to JEDEC1 for

1.2. sgb02n120.pdf Size:429K _igbt

SGB02N120
SGB02N120

 SGB02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability • Qualified accordi

4.1. sgb02n60_rev2_3.pdf Size:792K _infineon

SGB02N120
SGB02N120

SGB02N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D?-PAK) - paral

4.2. sgb02n60.pdf Size:790K _igbt

SGB02N120
SGB02N120

 SGB02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D

See also transistors datasheet: IKW50N60H3 , IKP20N60H3 , IHY20N135R3 , IKD03N60RF , IKD04N60RF , IHW20N135R3 , SGP10N60A , SGB02N60 , IRG4PH50U , SGD02N120 , SGD02N60 , SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 .

Search Terms:

 SGB02N120 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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