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GT25Q101 IGBT (IC) Datasheet. Cross Reference Search. GT25Q101 Equivalent

Type Designator: GT25Q101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 200W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 25A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 500

Maximum collector capacity (Cc), pF:

Package: TO264

GT25Q101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , IRG4PC40W , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 .

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 GT25Q101 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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