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GT25Q101 IGBT. Datasheet pdf. Equivalent

Type Designator: GT25Q101

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 4V

Maximum Collector Current |Ic|, A: 25A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 500

Package: TO264

GT25Q101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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Datasheet: GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , IRG4PC40W , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 .

 


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