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SGB10N60A IGBT (IC) Datasheet. Cross Reference Search. SGB10N60A Equivalent

Type Designator: SGB10N60A

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 92W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.3V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D2PAK(TO263)

SGB10N60A Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGB10N60A PDF doc:

1.1. sgb10n60a_rev2_3.pdf Size:789K _infineon

SGB10N60A
SGB10N60A

SGB10N60A Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses G Short circuit withstand time 10 s E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capabilit

See also transistors datasheet: SGB04N60 , SGW02N120 , SGD04N60 , SGB07N120 , SGB06N60 , SGD06N60 , SGB15N120 , SGW15N120 , CT60AM-18F , SGW25N120 , SGW10N60A , SGB15N60 , SGW15N60 , SGB20N60 , SGW20N60 , SGB30N60 , SGW30N60 .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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