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GT25Q301 IGBT (IC) Datasheet. Cross Reference Search. GT25Q301 Equivalent

Type Designator: GT25Q301

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 200W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.8V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 25A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 320

Maximum collector capacity (Cc), pF:

Package: TO264

GT25Q301 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: GT20G102 , GT20J301 , GT20J311 , GT25G101 , GT25G102 , GT25H101 , GT25J101 , GT25Q101 , RJH60F7ADPK , GT30J301 , GT30J311 , GT30J322 , GT40M101 , GT40M301 , GT40T301 , GT50G101 , GT50G102 .

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 GT25Q301 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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