SGI02N120 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: SGI02N120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 62W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 6.2A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D2PAK(TO263)

Equivalent transistors for SGI02N120

SGI02N120 PDF document for downloads:

1.1. sgp02n120_sgd02n120_sgi02n120_rev2_3g.pdf Size:376K _infineon

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: G E - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-252-3-11 PG-TO-262-3-1 PG-TO-220-3-1 • Qualified according to JEDEC1 for target applications (D-PAK) (I?-PAK) • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package SGP02N120 1200V 2A 0.11mJ GP02N120 PG-TO-220-3-1 150°C SGD02N120 1200V 2A 0.11mJ 02N120 PG-TO-252-3-11 150°C SGI02N120 1200V 2A 0.11mJ GI02N120 PG-TO-262-3-1 150°C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A 6.2 TC = 25°C 2.8 TC = 100°C Pulsed collector cu

See also transistors datasheet: SGB30N60 , SGW30N60 , SGP02N60 , SGP04N60 , SGP06N60 , SGP15N60 , SGP20N60 , SGP30N60 , IRGB4060D , SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS .

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