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SGP30N60HS IGBT (IC) Datasheet. Cross Reference Search. SGP30N60HS Equivalent

Type Designator: SGP30N60HS

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 250W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 41A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220

SGP30N60HS Transistor Equivalent Substitute - IGBT Cross-Reference Search

SGP30N60HS PDF doc:

1.1. sgp30n60hs_sgw30n60hs_rev2_4g.pdf Size:383K _infineon

SGP30N60HS
SGP30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High r

1.2. sgp30n60hs_sgw30n60hs_rev2.pdf Size:356K _infineon

SGP30N60HS
SGP30N60HS

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-220-3-1 PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High r

2.1. sgp30n60_sgw30n60_rev2_5g.pdf Size:361K _infineon

SGP30N60HS
SGP30N60HS

SGP30N60 SGW30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching

2.2. sgp30n60_sgw30n60_rev2.pdf Size:345K _infineon

SGP30N60HS
SGP30N60HS

SGP30N60 SGW30N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching

See also transistors datasheet: SGP02N120 , SGP07N120 , SGP15N120 , SGB15N60HS , SGW20N60HS , SGW30N60HS , SGW50N60HS , SGP20N60HS , G12N60C3D , IGB01N120H2 , IGD01N120H2 , IGA03N120H2 , IGB03N120H2 , IGW03N120H2 , IGP01N120H2 , IGP03N120H2 , IGW25N120H3 .

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