IGBT Datasheet



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IGW30N100T
  IGW30N100T
  IGW30N100T
  IGW30N100T
 
IGW30N100T
  IGW30N100T
  IGW30N100T
  IGW30N100T
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..CT20TM-8
CT20VM-8 ..G7N60C
G7N60C3 ..GT60M102
GT60M103 ..HGTD8P50G1S
HGTD8P50G1S9A ..IGA03N120H2
IGA30N60H3 ..IKW40N120T2
IKW40N60H3 ..IRG4PH40UD
IRG4PH40UD2-E ..IRGP4069D
IRGP4072D ..IXDP20N60B
IXDP20N60BD1 ..IXGH16N170A
IXGH16N170AH1 ..IXGH40N30B
IXGH40N30BD1 ..IXGN400N60B3
IXGN50N120C3H1 ..IXGR60N60C2D1
IXGR60N60C3C1 ..IXGX35N120C
IXGX35N120CD1 ..IXSR40N60BD1
IXSR40N60CD1 ..MGW12N120D
MGW14N60ED ..MIXA80WB1200TEH
MIXA80WB1200TEH ..NGB8202N
NGB8204N ..RJP60F4DPM
RJP60F5DPM ..SGW02N120
SGW10N60A ..SKM500GA123D
SKM500GA123S ..STGB18N40LZ
STGB19NC60H ..STGW30NC120HD
STGW30NC60KD ..VWI35-06P1
 
IGW30N100T All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IGW30N100T IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IGW30N100T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 412W

Maximum collector-emitter voltage |Uce|, V: 1000V

Collector-emitter saturation voltage |Ucesat|, V: 1.55V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IGW30N100T - Cross-Reference Search

IGW30N100T PDF doc:

1.1. igw30n100t_2_4.pdf Size:797K _infineon

IGW30N100T
IGW30N100T
IGW30N100T TrenchStop® series Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low V CEsat G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CEsat • Designed for: - frequency Converters - uninterrupted Power Supply • Low EMI • Low gate charge • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Type V I V , T =25°C T Marking Package Type V II VV , TT =25°C TT Marking Package Type VV I V , T =25°C T Marking Package Type , =25°C Marking Package IGW30N100T 1000V 30A 1.55V 175°C G30T100 PG-TO247-3 Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage V 1000 V DC collector current, limited by T T = 25°C I 60.0 A T = 100°C 30.0 Pulsed collector current, t

4.1. igw30n60h3_rev1_1g.pdf Size:1561K _infineon

IGW30N100T
IGW30N100T
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel diode G • maximum junction temperature 175°C E • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V I V , T =25°C T Marking Package Type V I V , T =25°C T Marking Package Type VV II VV , =25°C TT Marking Package Type , TT =25°C Marking Package IGW30N60H3 600V 30A 1.95V 175°C G30H603 PG-TO247-3 Rev. 1.1 2010-07-26

See also transistors datasheet: IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IRG4PH50UD , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T .

Keywords

 IGW30N100T Datasheet  IGW30N100T Datenblatt  IGW30N100T RoHS  IGW30N100T Distributor
 IGW30N100T Application Notes  IGW30N100T Component  IGW30N100T Circuit  IGW30N100T Schematic
 IGW30N100T Equivalent  IGW30N100T Cross Reference  IGW30N100T Data Sheet  IGW30N100T Fiche Technique

 

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