IGBT Datasheet



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IGW30N100T
  IGW30N100T
  IGW30N100T
  IGW30N100T
 
IGW30N100T
  IGW30N100T
  IGW30N100T
  IGW30N100T
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..FGL60N100BNTD
FGM622S ..GT30J122
GT30J124 ..HGT1S3N60C3D
HGT1S3N60C3DS ..HGTP10N50E1D
HGTP10N50F1D ..IHY30N160R2
IKA03N120H2 ..IRG4IBC30FD
IRG4IBC30KD ..IRGB14C40L
IRGB15B60KD ..IXBH40N160
IXBH42N170 ..IXGA8N100
IXGB200N60B3 ..IXGH30N60B4
IXGH30N60BD1 ..IXGK320N60B3
IXGK35N120B ..IXGQ20N120B
IXGQ50N60B4D1 ..IXGT32N90B2D1
IXGT35N120B ..IXSH35N100A
IXSH35N120A ..KGT25N120NDH
KGT25N135NDH ..MIXA10WB1200TML
MIXA10WB1200TML ..MUBW75-12T8
MUBW75-17T8 ..RJH60D5DPQ-A0
RJH60D6DPK ..SGL60N90D
SGL60N90DG3 ..SKM195GB062D
SKM195GB063DN ..SMBL1G150US60
SMBL1G200US120 ..STGF8NC60KD
STGFL6NC60D ..TIG111BF
TIG111GMH ..VWI35-06P1
 
IGW30N100T All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IGW30N100T IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IGW30N100T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 412W

Maximum collector-emitter voltage |Uce|, V: 1000V

Collector-emitter saturation voltage |Ucesat|, V: 1.55V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IGW30N100T - Cross-Reference Search

IGW30N100T PDF doc:

1.1. igw30n100t_2_4.pdf Size:797K _infineon

IGW30N100T
IGW30N100T
IGW30N100T TrenchStop® series Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low V CEsat G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CEsat • Designed for: - frequency Converters - uninterrupted Power Supply • Low EMI • Low gate charge • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Type V I V , T =25°C T Marking Package Type V II VV , TT =25°C TT Marking Package Type VV I V , T =25°C T Marking Package Type , =25°C Marking Package IGW30N100T 1000V 30A 1.55V 175°C G30T100 PG-TO247-3 Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage V 1000 V DC collector current, limited by T T = 25°C I 60.0 A T = 100°C 30.0 Pulsed collector current, t

4.1. igw30n60h3_rev1_1g.pdf Size:1561K _infineon

IGW30N100T
IGW30N100T
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel diode G • maximum junction temperature 175°C E • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V I V , T =25°C T Marking Package Type V I V , T =25°C T Marking Package Type VV II VV , =25°C TT Marking Package Type , TT =25°C Marking Package IGW30N60H3 600V 30A 1.95V 175°C G30H603 PG-TO247-3 Rev. 1.1 2010-07-26

See also transistors datasheet: IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IRG4PH50UD , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T .

Keywords

 IGW30N100T Datasheet  IGW30N100T Datenblatt  IGW30N100T RoHS  IGW30N100T Distributor
 IGW30N100T Application Notes  IGW30N100T Component  IGW30N100T Circuit  IGW30N100T Schematic
 IGW30N100T Equivalent  IGW30N100T Cross Reference  IGW30N100T Data Sheet  IGW30N100T Fiche Technique

 

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