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IGW30N100T IGBT (IC) Datasheet. Cross Reference Search. IGW30N100T Equivalent

Type Designator: IGW30N100T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 412W

Maximum collector-emitter voltage |Uce|, V: 1000V

Collector-emitter saturation voltage |Ucesat|, V: 1.55V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IGW30N100T Transistor Equivalent Substitute - IGBT Cross-Reference Search

IGW30N100T PDF doc:

1.1. igw30n100t_2_4.pdf Size:797K _infineon

IGW30N100T
IGW30N100T

IGW30N100T TrenchStop® series Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low V CEsat G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CEsat • Designed for: - frequency Converters - uninterrupted Power Suppl

4.1. igw30n60h3_rev1_1g.pdf Size:1561K _infineon

IGW30N100T
IGW30N100T

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel diode G

See also transistors datasheet: IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IRG4PH50UD , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T(G30T60) , IGP30N60T .

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