IGBT Datasheet


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IGW30N100T
  IGW30N100T
  IGW30N100T
 
IGW30N100T
  IGW30N100T
  IGW30N100T
 
IGW30N100T
  IGW30N100T
 
 
List
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30K
IRG4PH30KD ..IRGP4066D
IRGP4066D-E ..IXDH35N60BD1
IXDN50N120AU1 ..IXGH15N120B2D1
IXGH15N120BD1 ..IXGH40N120B2D1
IXGH40N120C3 ..IXGN200N60B
IXGN200N60B3 ..IXGR55N120A3H1
IXGR60N60B2 ..IXGX320N60B3
IXGX32N170AH1 ..IXSP20N60B2D1
IXSP24N60B ..MGP7N60ED
MGS05N60D ..MIXA80R1200VA
MIXA80W1200TED ..MWI75-12T8T
MWI80-12T6K ..RJP60D0DPK
RJP60D0DPM ..SGS6N60UF
SGS6N60UFD ..SKM400GB123D
SKM400GB124D ..STGB10NB60S
STGB10NC60HD ..STGW20NC60VD
STGW25H120DF ..VWI35-06P1
 
IGW30N100T All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IGW30N100T IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IGW30N100T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 412W

Maximum collector-emitter voltage |Uce|, V: 1000V

Collector-emitter saturation voltage |Ucesat|, V: 1.55V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IGW30N100T

IGW30N100T PDF doc:

1.1. igw30n100t_2_4.pdf Size:797K _infineon

IGW30N100T
IGW30N100T
IGW30N100T TrenchStop® series Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low V CEsat G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CEsat • Designed for: - frequency Converters - uninterrupted Power Supply • Low EMI • Low gate charge • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Type V I V , T =25°C T Marking Package Type V II VV , TT =25°C TT Marking Package Type VV I V , T =25°C T Marking Package Type , =25°C Marking Package IGW30N100T 1000V 30A 1.55V 175°C G30T100 PG-TO247-3 Maximum ratings Parameter Symbol Value Unit Collector-emitter voltage V 1000 V DC collector current, limited by T T = 25°C I 60.0 A T = 100°C 30.0 Pulsed collector current, t

4.1. igw30n60h3_rev1_1g.pdf Size:1561K _infineon

IGW30N100T
IGW30N100T
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel diode G • maximum junction temperature 175°C E • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • uninterruptible power supplies • welding converters • converters with high switching frequency Key Performance and Package Parameters Type V I V , T =25°C T Marking Package Type V I V , T =25°C T Marking Package Type VV II VV , =25°C TT Marking Package Type , TT =25°C Marking Package IGW30N60H3 600V 30A 1.95V 175°C G30H603 PG-TO247-3 Rev. 1.1 2010-07-26

See also transistors datasheet: IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IRG4PH50UD , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T .

Keywords

 IGW30N100T Datasheet  IGW30N100T Datenblatt  IGW30N100T RoHS  IGW30N100T Distributor
 IGW30N100T Application Notes  IGW30N100T Component  IGW30N100T Circuit  IGW30N100T Schematic
 IGW30N100T Equivalent  IGW30N100T Cross Reference  IGW30N100T Data Sheet  IGW30N100T Fiche Technique

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