IGBT Datasheet



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GT40M101
  GT40M101
  GT40M101
  GT40M101
 
GT40M101
  GT40M101
  GT40M101
  GT40M101
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..AUIRG4BC30U-S
AUIRG4BC30U-SL ..G10N40E1
G10N50 ..GT45G128
GT50G101 ..HGTD10N40F1
HGTD10N40F1S ..HGTP20N35G3VL
HGTP20N60A4 ..IKI04N60T
IKP01N120H2 ..IRG4PC40KD
IRG4PC40S ..IRGBC20S
IRGBC30S ..IXBT16N170
IXBT16N170A ..IXGF36N300
IXGH100N30B3 ..IXGH32N60B
IXGH32N60BD1 ..IXGK60N60B2D1
IXGK60N60C2D1 ..IXGR39N60B
IXGR39N60BD1 ..IXGT50N90B2
IXGT60N60 ..IXSK40N60CD1
IXSK50N60AU1 ..MDI550-12A4
MDI75-12A3 ..MIXA30W1200TED
MIXA30W1200TED ..MWI30-12E6K
MWI300-12E9 ..RJH60M0DPQ-A0
RJH60M1DPE ..SGP23N60UF
SGP30N60 ..SKM300GA123D
SKM300GA173D ..SMC7G5US120
SME6G10US120 ..STGP20NC60V
STGP30NC60K ..VWI35-06P1
 
GT40M101 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

GT40M101 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT40M101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 3.4V

Maximum gate-emitter voltage |Ueg|, V: 15V

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 400

Maximum collector capacity (Cc), pF:

Package: TOP3

Equivalent transistors for GT40M101 - Cross-Reference Search

GT40M101 PDF doc:

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See also transistors datasheet: GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , G12N60C3D , GT40M301 , GT40T301 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 .

Keywords

 GT40M101 Datasheet  GT40M101 Datenblatt  GT40M101 RoHS  GT40M101 Distributor
 GT40M101 Application Notes  GT40M101 Component  GT40M101 Circuit  GT40M101 Schematic
 GT40M101 Equivalent  GT40M101 Cross Reference  GT40M101 Data Sheet  GT40M101 Fiche Technique

 

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