IGBT Datasheet



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GT40M101
  GT40M101
  GT40M101
  GT40M101
 
GT40M101
  GT40M101
  GT40M101
  GT40M101
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..CT20TM-8
CT20VM-8 ..G7N60C
G7N60C3 ..GT60M102
GT60M103 ..HGTD8P50G1S
HGTD8P50G1S9A ..IGA03N120H2
IGA30N60H3 ..IKW40N120T2
IKW40N60H3 ..IRG4PH40UD
IRG4PH40UD2-E ..IRGP4069D
IRGP4072D ..IXDP20N60B
IXDP20N60BD1 ..IXGH16N170A
IXGH16N170AH1 ..IXGH40N30B
IXGH40N30BD1 ..IXGN400N60B3
IXGN50N120C3H1 ..IXGR60N60C2D1
IXGR60N60C3C1 ..IXGX35N120C
IXGX35N120CD1 ..IXSR40N60BD1
IXSR40N60CD1 ..MGW12N120D
MGW14N60ED ..MIXA80WB1200TEH
MIXA80WB1200TEH ..NGB8202N
NGB8204N ..RJP60F4DPM
RJP60F5DPM ..SGW02N120
SGW10N60A ..SKM500GA123D
SKM500GA123S ..STGB18N40LZ
STGB19NC60H ..STGW30NC120HD
STGW30NC60KD ..VWI35-06P1
 
GT40M101 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

GT40M101 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: GT40M101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 3.4V

Maximum gate-emitter voltage |Ueg|, V: 15V

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 400

Maximum collector capacity (Cc), pF:

Package: TOP3

Equivalent transistors for GT40M101 - Cross-Reference Search

GT40M101 PDF doc:

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See also transistors datasheet: GT25G102 , GT25H101 , GT25J101 , GT25Q101 , GT25Q301 , GT30J301 , GT30J311 , GT30J322 , G12N60C3D , GT40M301 , GT40T301 , GT50G101 , GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 .

Keywords

 GT40M101 Datasheet  GT40M101 Datenblatt  GT40M101 RoHS  GT40M101 Distributor
 GT40M101 Application Notes  GT40M101 Component  GT40M101 Circuit  GT40M101 Schematic
 GT40M101 Equivalent  GT40M101 Cross Reference  GT40M101 Data Sheet  GT40M101 Fiche Technique

 

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