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IGB50N60T IGBT (IC) Datasheet. Cross Reference Search. IGB50N60T Equivalent

Type Designator: IGB50N60T

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 333W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 100A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D2PAK(TO263)

IGB50N60T Transistor Equivalent Substitute - IGBT Cross-Reference Search

IGB50N60T PDF doc:

1.1. igb50n60t_rev2_5g.pdf Size:462K _infineon

IGB50N60T
IGB50N60T

IGB50N60T TrenchStop® Series p Low Loss IGBT in TrenchStop® technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners • TrenchStop® technology for 600 V applications offers : - very tight parameter distribution - high ru

1.2. igb50n60t.pdf Size:659K _igbt_a

IGB50N60T
IGB50N60T

IGB50N60T TRENCHSTOP™ Series p Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: C C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G G  Designed for frequency inverters for washing machines, fans, E E pumps and vacuum cleaners  TRENCHSTOP™ technology for 600V applications offers :

See also transistors datasheet: IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T(G30T60) , IGP30N60T , IGW30N60T(G30T60) , GT30J322 , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S .

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