All IGBT. IRG4BC40WL Datasheet

 

IRG4BC40WL IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4BC40WL

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 160W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.50V

Maximum Collector Current |Ic|, A: 40A

Package: TO262

IRG4BC40WL Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC40WL PDF doc:

1.1. irg4bc40w.pdf Size:129K _international_rectifier

IRG4BC40WL
IRG4BC40WL

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E

1.2. irg4bc40ws.pdf Size:352K _igbt_a

IRG4BC40WL
IRG4BC40WL

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

1.3. irg4bc40wl.pdf Size:352K _igbt_a

IRG4BC40WL
IRG4BC40WL

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

1.4. irg4bc40w.pdf Size:132K _igbt_a

IRG4BC40WL
IRG4BC40WL

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

Datasheet: IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S , IRG4BC30U-S , GT30J301 , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IRG4PC50SD .

 


IRG4BC40WL
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