All IGBT Datasheet

 

IRG4BC40WL IGBT (IC) Datasheet. Cross Reference Search. IRG4BC40WL Equivalent

Type Designator: IRG4BC40WL

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 160W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.50V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO262

IRG4BC40WL Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC40WL PDF doc:

1.1. irg4bc40w.pdf Size:129K _international_rectifier

IRG4BC40WL
IRG4BC40WL

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E

1.2. irg4bc40ws.pdf Size:352K _igbt_a

IRG4BC40WL
IRG4BC40WL

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

1.3. irg4bc40wl.pdf Size:352K _igbt_a

IRG4BC40WL
IRG4BC40WL

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

1.4. irg4bc40w.pdf Size:132K _igbt_a

IRG4BC40WL
IRG4BC40WL

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

See also transistors datasheet: IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , IRG4BC30FD-S , IRG4BC30S-S , IRG4BC30U-S , GT30J301 , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IRG4PC50SD .

Search Terms:

 IRG4BC40WL - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRG4BC40WL
  IRG4BC40WL
  IRG4BC40WL
  IRG4BC40WL
 
IRG4BC40WL
  IRG4BC40WL
  IRG4BC40WL
  IRG4BC40WL
 

social 

LIST

Last Update

IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

Enter a full or partial SMD code with a minimum of 2 letters or numbers