All IGBT. IRG4RC20F Datasheet

 

IRG4RC20F IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4RC20F

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 66W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1V

Maximum Collector Current |Ic|, A: 22A

Package: D-Pak

IRG4RC20F Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4RC20F PDF doc:

1.1. irg4rc20f.pdf Size:264K _international_rectifier

IRG4RC20F
IRG4RC20F

PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.82V parameter distribution and higher efficiency than G previous generation IGBTs. Industry standard TO-252AA package @

1.2. irg4rc20f.pdf Size:209K _igbt_a

IRG4RC20F
IRG4RC20F

PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.82V parameter distribution and higher efficiency than G previous generation IGBTs. • Industry standard TO-252AA

4.1. irg4rc10sd.pdf Size:189K _international_rectifier

IRG4RC20F
IRG4RC20F

2, ' $%&) IRG4RC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1V(typ) @ 2A VCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.10V KHz in brushless DC drives. G Tight parameter distribution IGBT co-packaged

4.2. irg4rc10k.pdf Size:134K _international_rectifier

IRG4RC20F
IRG4RC20F

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 Industry standard TO-252AA package @V

4.3. irg4rc10kd.pdf Size:190K _international_rectifier

IRG4RC20F
IRG4RC20F

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.39V Generation 4 IGBT design provides tighter G parameter distribution and hig

4.4. irg4rc10ud.pdf Size:191K _international_rectifier

IRG4RC20F
IRG4RC20F

PD 91571A I UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Features Features Features Features UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution and high

4.5. irg4rc10u.pdf Size:131K _international_rectifier

IRG4RC20F
IRG4RC20F

PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighter VCE(on) typ. = 2.15V G parameter distribution and higher efficiency than previous genera

4.6. irg4rc10s.pdf Size:120K _international_rectifier

IRG4RC20F
IRG4RC20F

PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.0V typical at 2A, 100C VCES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter VCE(on) typ. = 1.10V G parameter distribution and higher efficiency than previous generati

4.7. irg4rc10sd.pdf Size:726K _igbt_a

IRG4RC20F
IRG4RC20F

PD-91678B IRG4RC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V(typ) @ 2A VCES = 600V • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.10V KHz in brushless DC drives. G • Tight parameter distribution • IGBT

4.8. irg4rc10k.pdf Size:138K _igbt_a

IRG4RC20F
IRG4RC20F

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 • Industry standard TO-252AA

4.9. irg4rc10kd.pdf Size:193K _igbt_a

IRG4RC20F
IRG4RC20F

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.39V • Generation 4 IGBT design provides tighter G parameter distributio

4.10. irg4rc10ud.pdf Size:194K _igbt_a

IRG4RC20F
IRG4RC20F

PD 91571A I UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Features Features Features Features • UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). VCE(on) typ. = 2.15V • Generation 4 IGBT design provides tighter parameter distribution a

4.11. irg4rc10u.pdf Size:136K _igbt_a

IRG4RC20F
IRG4RC20F

PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.15V G parameter distribution and higher efficiency than previous

4.12. irg4rc10s.pdf Size:724K _igbt_a

IRG4RC20F
IRG4RC20F

PD- 91732B IRG4RC10S www.irf.com 1 07/04/07 IRG4RC10S 1.8 2 www.irf.com IRG4RC10S www.irf.com 3 IRG4RC10S 4 www.irf.com IRG4RC10S www.irf.com 5 IRG4RC10S 6 www.irf.com IRG4RC10S www.irf.com 7 IRG4RC10S D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Note: For the most current drawing please refer

Datasheet: IRG4PC50F-E , IRG4PC50SD , IRG4PC60F , IRG4PC60U , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4BC30W-S , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U .

 


IRG4RC20F
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