All IGBT Datasheet

 

IRG4RC20F IGBT (IC) Datasheet. Cross Reference Search. IRG4RC20F Equivalent

Type Designator: IRG4RC20F

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 66W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.1V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 22A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D-Pak

IRG4RC20F Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4RC20F PDF doc:

1.1. irg4rc20f.pdf Size:264K _international_rectifier

IRG4RC20F
IRG4RC20F

PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.82V parameter distribution and higher efficiency than G previous generation IGBTs. Industry standard TO-252AA package @

1.2. irg4rc20f.pdf Size:209K _igbt_a

IRG4RC20F
IRG4RC20F

PD - 91731A IRG4RC20F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.82V parameter distribution and higher efficiency than G previous generation IGBTs. • Industry standard TO-252AA

4.1. irg4rc10sd.pdf Size:189K _international_rectifier

IRG4RC20F
IRG4RC20F

2, ' $%&) IRG4RC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1V(typ) @ 2A VCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.10V KHz in brushless DC drives. G Tight parameter distribution IGBT co-packaged

4.2. irg4rc10k.pdf Size:134K _international_rectifier

IRG4RC20F
IRG4RC20F

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 Industry standard TO-252AA package @V

4.3. irg4rc10kd.pdf Size:190K _international_rectifier

IRG4RC20F
IRG4RC20F

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.39V Generation 4 IGBT design provides tighter G parameter distribution and hig

4.4. irg4rc10ud.pdf Size:191K _international_rectifier

IRG4RC20F
IRG4RC20F

PD 91571A I UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Features Features Features Features UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution and high

4.5. irg4rc10u.pdf Size:131K _international_rectifier

IRG4RC20F
IRG4RC20F

PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighter VCE(on) typ. = 2.15V G parameter distribution and higher efficiency than previous genera

4.6. irg4rc10s.pdf Size:120K _international_rectifier

IRG4RC20F
IRG4RC20F

PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.0V typical at 2A, 100C VCES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter VCE(on) typ. = 1.10V G parameter distribution and higher efficiency than previous generati

4.7. irg4rc10sd.pdf Size:726K _igbt_a

IRG4RC20F
IRG4RC20F

PD-91678B IRG4RC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V(typ) @ 2A VCES = 600V • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.10V KHz in brushless DC drives. G • Tight parameter distribution • IGBT

4.8. irg4rc10k.pdf Size:138K _igbt_a

IRG4RC20F
IRG4RC20F

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 • Industry standard TO-252AA

4.9. irg4rc10kd.pdf Size:193K _igbt_a

IRG4RC20F
IRG4RC20F

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.39V • Generation 4 IGBT design provides tighter G parameter distributio

4.10. irg4rc10ud.pdf Size:194K _igbt_a

IRG4RC20F
IRG4RC20F

PD 91571A I UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Features Features Features Features • UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). VCE(on) typ. = 2.15V • Generation 4 IGBT design provides tighter parameter distribution a

4.11. irg4rc10u.pdf Size:136K _igbt_a

IRG4RC20F
IRG4RC20F

PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.15V G parameter distribution and higher efficiency than previous

4.12. irg4rc10s.pdf Size:724K _igbt_a

IRG4RC20F
IRG4RC20F

PD- 91732B IRG4RC10S www.irf.com 1 07/04/07 IRG4RC10S 1.8 2 www.irf.com IRG4RC10S www.irf.com 3 IRG4RC10S 4 www.irf.com IRG4RC10S www.irf.com 5 IRG4RC10S 6 www.irf.com IRG4RC10S www.irf.com 7 IRG4RC10S D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Note: For the most current drawing please refer

See also transistors datasheet: IRG4PC50F-E , IRG4PC50SD , IRG4PC60F , IRG4PC60U , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4BC30W-S , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U .

Search Terms:

 IRG4RC20F - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRG4RC20F
  IRG4RC20F
  IRG4RC20F
  IRG4RC20F
 
IRG4RC20F
  IRG4RC20F
  IRG4RC20F
  IRG4RC20F
 

social 

LIST

Last Update

IGBT: STGWT60V60DF | STGWT60H65FB | STGWT60H65DFB | STGWT60H60DLFB | STGWT28IH125DF | STGWA60H65DFB | STGWA25S120DF3 | STGWA25H120F2 | STGWA25H120DF2 | STGW60V60F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers