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IRG6S320U IGBT (IC) Datasheet. Cross Reference Search. IRG6S320U Equivalent

Type Designator: IRG6S320U

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 114W

Maximum Collector-Emitter Voltage |Vce|, V: 330V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 50A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: D2Pak

IRG6S320U Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG6S320U PDF doc:

1.1. irg6s320u.pdf Size:287K _igbt_a

IRG6S320U
IRG6S320U

PD -96218A PDP TRENCH IGBT IRG6S320UPbF Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 24A 1.45 V circuits in PDP applications IRP max @ TC= 25°C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l L

See also transistors datasheet: IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRGP4063D , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U .

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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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