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IRG7I319U IGBT (IC) Datasheet. Cross Reference Search. IRG7I319U Equivalent

Type Designator: IRG7I319U

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 34W

Maximum collector-emitter voltage |Uce|, V: 330V

Collector-emitter saturation voltage |Ucesat|, V: 1.45V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220_FullPak

IRG7I319U Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG7I319U PDF doc:

1.1. irg7i319u.pdf Size:297K _igbt_a

IRG7I319U
IRG7I319U

PD -96273 PDP TRENCH IGBT IRG7I319UPbF Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25°C 170 A circuits in PDP applications TJ max 150 °C l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability C l

3.1. irg7i313u.pdf Size:203K _igbt_a

IRG7I319U
IRG7I319U

PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.35 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l L

5.1. irg7ia19u.pdf Size:287K _igbt_a

IRG7I319U
IRG7I319U

PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lea

5.2. irg7ia13u.pdf Size:171K _igbt_a

IRG7I319U
IRG7I319U

PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Key Parameters Features VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25°C circuits in PDP applications 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l L

5.3. irg7ic28u.pdf Size:282K _igbt_a

IRG7I319U
IRG7I319U

PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l

5.4. irg7ic30fd.pdf Size:298K _igbt_a

IRG7I319U
IRG7I319U

IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE(on) VCES = 600V • Zero VCE(on) temperature coefficient • 3µs Short Circuit Capability INOM = 24A • Square RBSOA VCE(on) typ. = 1.60V Benefits G • Benchmark Efficiency for Motor Control Applications E tSC 3μs, TJ(max) = 150°C • Rugged Transient Performance

See also transistors datasheet: IRG4RC20F , IRG6B330UD , IRG6I320U , IRG6I330U , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , RJH60F7ADPK , IRG7IA13U , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D .

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