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IRG7P313U IGBT (IC) Datasheet. Cross Reference Search. IRG7P313U Equivalent

Type Designator: IRG7P313U

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 89W

Maximum collector-emitter voltage |Uce|, V: 330V

Collector-emitter saturation voltage |Ucesat|, V: 1.45V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IRG7P313U Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG7P313U PDF doc:

5.1. irg7ph30k10.pdf Size:321K _igbt_a

IRG7P313U
IRG7P313U

PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE (ON) Trench IGBT Technology VCES = 1200V • Low Switching Losses • Maximum Junction Temperature 175 °C IC = 23A, TC = 100°C • 10 µS short Circuit SOA • Square RBSOA G tSC ≥ 10µs, TJ(max) =175°C • 100% of the parts tested for ILM E • Positive VCE (ON) Temperature Co-Efficient VC

5.2. irg7ph35u.pdf Size:374K _igbt_a

IRG7P313U
IRG7P313U

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

5.3. irg7psh73k10.pdf Size:388K _igbt_a

IRG7P313U
IRG7P313U

PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 1200V • Low VCE (ON) Trench IGBT Technology • Low Switching Losses IC(Nominal) = 75A • Maximum Junction Temperature 175 °C • 10 μS short Circuit SOA G tSC ≥ 10μs, TJ(max) =175°C • Square RBSOA • 100% of The Parts Tested for ILM E VCE(on) typ. = 2.0V • Positive VCE (ON) Temperatur

5.4. irg7ph46u.pdf Size:297K _igbt_a

IRG7P313U
IRG7P313U

PD - 96305A IRG7PH46UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH46U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C IC = 75A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G TJ(max) =175°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution VC

5.5. irg7ph42ud.pdf Size:435K _igbt_a

IRG7P313U
IRG7P313U

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA IC = 45A, TC = 100°C • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diod

5.6. irg7pk35ud1.pdf Size:539K _igbt_a

IRG7P313U
IRG7P313U

IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V C IC = 20A, TC =100°C TJ(max) = 150°C G E E C G C G VCE(ON) typ. = 2.0V @ IC = 20A E IRG7PK35UD1PbF  IRG7PK35UD1‐EPbF  n-channel TO‐247AC  TO‐247AD  Applications  Induction heating G C E  Microwave ovens Gate Colle

5.7. irg7ph42ud1.pdf Size:331K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT technology • Low switching losses • Square RBSOA I NOMINAL = 30A • Ultra-low VF Diode G • 1300Vpk repetitive transient capacity TJ(max) = 150°C • 100% of the parts tested for IL

5.8. irg7pg42ud.pdf Size:565K _igbt_a

IRG7P313U
IRG7P313U

IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features  Low VCE (ON) trench IGBT technology IC = 45A, TC = 100°C  Low switching losses G  Square RBSOA TJ(MAX) = 150°C  100% of the parts tested for ILM E VCE(ON) typ. = 1.7V @ IC = 30A  Positive VCE (ON) temperature co-efficient n-channel  Ultra

5.9. irg7ph35ud1m.pdf Size:300K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C • Low VCE (ON) trench IGBT Technology VCES = 1200V • Low Switching Losses • Square RBSOA IC = 25A, TC = 100°C • Ultra-Low VF Diode • 1300Vpk Repetitive Transient Capacity G TJ(max) = 150°C • 100% of the Parts Tested for ILM •

5.10. irg7ph30k10d.pdf Size:437K _igbt_a

IRG7P313U
IRG7P313U

PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 1200V • Low switching losses • 10 µS short circuit SOA IC = 16A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G tSC ≥ 10µs, TJ(max) = 150°C • Positive VCE (ON) Temperature co-efficient • Ultra

5.11. irg7ph50u-e.pdf Size:361K _igbt_a

IRG7P313U
IRG7P313U

PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C IC = 90A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G TJ(max) =175°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution VCE

5.12. irg7ph35u-ep.pdf Size:374K _igbt_a

IRG7P313U
IRG7P313U

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

5.13. irg7ph42u-ep.pdf Size:299K _igbt_a

IRG7P313U
IRG7P313U

PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C IC = 60A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G TJ(max) =175°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution VC

5.14. irg7ph50k10d.pdf Size:561K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C G C E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channel IRG7PH50K10DPbF  IRG7PH50K10D‐EPbF  Applications • Industrial Motor Drive G C E • UPS Gate Collector Emitter • So

5.15. irg7ph42ud-ep.pdf Size:435K _igbt_a

IRG7P313U
IRG7P313U

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA IC = 45A, TC = 100°C • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diod

5.16. irg7ph44k10d.pdf Size:894K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100°C tSC 10µs, TJ(max) = 150°C G E C E G C G E VCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbF IRG7PH44K10D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E • Industrial Motor Drive Gate Collector E

5.17. irg7pg35u.pdf Size:441K _igbt_a

IRG7P313U
IRG7P313U

IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features  Low VCE (ON) trench IGBT technology IC = 35A, TC = 100°C  Low switching losses G TJ(MAX) = 175°C  Square RBSOA  100% of the parts tested for ILM E VCE(ON) typ. = 1.9V@ IC = 20A  Positive VCE (ON) temperature co-efficient n-channel  Tight par

5.18. irg7ph37k10d.pdf Size:653K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100°C E tSC 10µs, TJ(max) = 150°C E G C C G G E VCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbF IRG7PH37K10D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E • Industrial Motor Drive Gate Collecto

5.19. irg7ph35ud1.pdf Size:326K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

5.20. irg7ph35ud.pdf Size:461K _igbt_a

IRG7P313U
IRG7P313U

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA I NOMINAL = 20A • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diode • T

5.21. irg7ph50u.pdf Size:361K _igbt_a

IRG7P313U
IRG7P313U

PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C IC = 90A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G TJ(max) =175°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution VCE

5.22. irg7ph46ud-e.pdf Size:351K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA I NOMINAL = 40A • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diode • Tight parame

5.23. irg7ph46ud.pdf Size:351K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA I NOMINAL = 40A • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diode • Tight parame

5.24. irg7ph42ud1m.pdf Size:283K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA IC = 45A, TC = 100°C • Ultra-low VF Diode TJ(max) = 150°C • 1300Vpk repetitive transient capacity G • 100% of the parts tested for ILM VCE

5.25. irg7psh50ud.pdf Size:384K _igbt_a

IRG7P313U
IRG7P313U

PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA I NOMINAL = 50A • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diode • Tight paramete

5.26. irg7ph35ud1-ep.pdf Size:326K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

5.27. irg7psh54k10d.pdf Size:764K _igbt_a

IRG7P313U
IRG7P313U

IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C E G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel IRG7PSH54K10DPbF  Applications • Industrial Motor Drive G C E • UPS Gate Collector Emitter • Solar Inverters • Welding Features Benefits Low VC

5.28. irg7ph42u.pdf Size:299K _igbt_a

IRG7P313U
IRG7P313U

PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C IC = 60A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G TJ(max) =175°C • Positive VCE (ON) temperature co-efficient E • Tight parameter distribution VC

5.29. irg7ph28ud1.pdf Size:399K _igbt_a

IRG7P313U
IRG7P313U

IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C VCES = 1200V Features  Low VCE (ON) trench IGBT technology IC = 15A, TC = 100°C  Low switching losses TJ(MAX) = 150°C G  Square RBSOA  Ultra-low VF diode VCE(ON) typ. = 1.95V E  1300Vpk repetitiv

5.30. irg7pa19u.pdf Size:265K _igbt_a

IRG7P313U
IRG7P313U

PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25°C 300 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lea

See also transistors datasheet: IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U , G12N60C3D , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U .

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