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IRG7PH30K10D IGBT (IC) Datasheet. Cross Reference Search. IRG7PH30K10D Equivalent

Type Designator: IRG7PH30K10D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 180W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.35V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IRG7PH30K10D Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , P12N60C3 , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD .

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 IRG7PH30K10D - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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