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IRG7PH30K10D IGBT (IC) Datasheet. Cross Reference Search. IRG7PH30K10D Equivalent

Type Designator: IRG7PH30K10D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 180W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.35V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 30A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247

IRG7PH30K10D Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG7PH30K10D PDF doc:

1.1. irg7ph30k10.pdf Size:321K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE (ON) Trench IGBT Technology VCES = 1200V • Low Switching Losses • Maximum Junction Temperature 175 °C IC = 23A, TC = 100°C • 10 µS short Circuit SOA • Square RBSOA G tSC ≥ 10µs, TJ(max) =175°C • 100% of the parts tested for ILM E • Positive VCE (ON) Temperature Co-Efficient VC

1.2. irg7ph30k10d.pdf Size:437K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 1200V • Low switching losses • 10 µS short circuit SOA IC = 16A, TC = 100°C • Square RBSOA • 100% of the parts tested for ILM G tSC ≥ 10µs, TJ(max) = 150°C • Positive VCE (ON) Temperature co-efficient • Ultra

3.1. irg7ph35u.pdf Size:374K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

3.2. irg7ph35ud1m.pdf Size:300K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C • Low VCE (ON) trench IGBT Technology VCES = 1200V • Low Switching Losses • Square RBSOA IC = 25A, TC = 100°C • Ultra-Low VF Diode • 1300Vpk Repetitive Transient Capacity G TJ(max) = 150°C • 100% of the Parts Tested for ILM •

3.3. irg7ph35u-ep.pdf Size:374K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

3.4. irg7ph37k10d.pdf Size:653K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100°C E tSC 10µs, TJ(max) = 150°C E G C C G G E VCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbF IRG7PH37K10D‐EPbF  n-channel TO‐247AC TO‐247AD  Applications G C E • Industrial Motor Drive Gate Collecto

3.5. irg7ph35ud1.pdf Size:326K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

3.6. irg7ph35ud.pdf Size:461K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA I NOMINAL = 20A • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diode • T

3.7. irg7ph35ud1-ep.pdf Size:326K _igbt_a

IRG7PH30K10D
IRG7PH30K10D

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

See also transistors datasheet: IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , P12N60C3 , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD .

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