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IRG7PH35UD1 IGBT (IC) Datasheet. Cross Reference Search. IRG7PH35UD1 Equivalent

Type Designator: IRG7PH35UD1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 179W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 2.20V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IRG7PH35UD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: IRG7IC28U , IRG7P313U , IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IGW30N100T , IRG7PH42U , IRG7PH42UD , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD .

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 IRG7PH35UD1 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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