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IRGB4062D IGBT (IC) Datasheet. Cross Reference Search. IRGB4062D Equivalent

Type Designator: IRGB4062D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 250W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.95V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 48A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220AB

IRGB4062D Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGB4062D PDF doc:

5.1. irgb420u.pdf Size:102K _international_rectifier

IRGB4062D
IRGB4062D

PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 7.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hig

5.2. irgb420ud2.pdf Size:207K _international_rectifier

IRGB4062D
IRGB4062D

PD - 9.1066 IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating f requency (over 5kHz) VCE(sat) ? 2.9V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 7.5A E n-channel Descriptio

5.3. irgb4b60kd1.pdf Size:377K _international_rectifier

IRGB4062D
IRGB4062D

PD - 94607 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 6.8A, TC=100C 10s Short Circuit Capability. G Square RBSOA. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175C. VCE(on)

5.4. irgb430ud2.pdf Size:205K _international_rectifier

IRGB4062D
IRGB4062D

PD - 9.1067 IRGB430UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 15A E n-channel Description C

5.5. irgb440u.pdf Size:101K _international_rectifier

IRGB4062D
IRGB4062D

PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hig

5.6. irgb430u.pdf Size:103K _international_rectifier

IRGB4062D
IRGB4062D

PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 15A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hig

5.7. irgb4b60k.pdf Size:345K _international_rectifier

IRGB4062D
IRGB4062D

PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient. G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150C E Benefits VCE

See also transistors datasheet: IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IXGH40N60B2D1 , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K .

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