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IRGB4062D IGBT (IC) Datasheet. Cross Reference Search. IRGB4062D Equivalent

Type Designator: IRGB4062D

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 250W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.95V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 48A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220AB

IRGB4062D Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGB4062D PDF doc:

1.1. auirgb4062d1.pdf Size:415K _igbt_a

IRGB4062D
IRGB4062D

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

1.2. irgb4062d.pdf Size:434K _igbt_a

IRGB4062D
IRGB4062D

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

3.1. irgb4060d.pdf Size:294K _igbt_a

IRGB4062D
IRGB4062D

PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 8.0A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5µs SCSOA E VCE(on) typ. = 1.55V • Square RBSOA n-channel • 100% of The Parts Tested for 4X Rate

3.2. irgb4064d.pdf Size:374K _igbt_a

IRGB4062D
IRGB4062D

PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 10A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tsc > 5µs, Tjmax = 175°C • Maximum Junction temperature 175 °C • 5µs SCSOA E • Square RBSOA VCE(on) typ. = 1.6V n-channel • 100% of The Parts Tested for ILM •

3.3. irgb4061d.pdf Size:405K _igbt_a

IRGB4062D
IRGB4062D

PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 18A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) •

See also transistors datasheet: IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D , IRGB4060D , IRGB4061D , IXGH40N60B2D1 , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K .

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 IRGB4062D - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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