IRGB6B60K IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IRGB6B60K

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 90W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.80V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 13A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220AB

Equivalent transistors for IRGB6B60K

IRGB6B60K PDF document for downloads:

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See also transistors datasheet: IRGB4060D , IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , CT75AM-12 , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD .

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