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IRGIB7B60KD IGBT (IC) Datasheet. Cross Reference Search. IRGIB7B60KD Equivalent

Type Designator: IRGIB7B60KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 39W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.20V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 12A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO220_FullPak

IRGIB7B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGIB7B60KD PDF doc:

1.1. irgib7b60kd.pdf Size:391K _international_rectifier

IRGIB7B60KD
IRGIB7B60KD

PD - 94620 IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 8.0A, TC=100C 10s Short Circuit Capability. G Square RBSOA. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175C. VCE(on) typ. = 1.8V n-channel Be

1.2. irgib7b60kd.pdf Size:439K _igbt_a

IRGIB7B60KD
IRGIB7B60KD

PD - 94620B IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 8.0A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated at 175°C. VCE(on) typ. =

5.1. irgib6b60kd.pdf Size:258K _international_rectifier

IRGIB7B60KD
IRGIB7B60KD

PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 6.0A, TC=90C Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. G 10s Short Circuit Capability. tsc > 10s, TJ=150C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. E Positive VCE (on) Temperature Coefficient. VCE(on) typ.

5.2. irgib10b60kd1.pdf Size:361K _international_rectifier

IRGIB7B60KD
IRGIB7B60KD

PD-94576 IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability. G Square RBSOA. tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. E Maximum Ju

5.3. irgib15b60kd1.pdf Size:282K _igbt_a

IRGIB7B60KD
IRGIB7B60KD

PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100°C • Low Diode VF. • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coeffici

5.4. irgib6b60kd.pdf Size:277K _igbt_a

IRGIB7B60KD
IRGIB7B60KD

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 6.0A, TC=90°C • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. G • 10µs Short Circuit Capability. tsc > 10µs, TJ=175°C • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. E • Positive VCE (on) Temperature Coeffici

5.5. irgib10b60kd1.pdf Size:384K _igbt_a

IRGIB7B60KD
IRGIB7B60KD

PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 10A, TC=100°C • Low Diode VF. • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficie

See also transistors datasheet: IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , IKW40N120H3 , IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD , IRGP35B60PD-E , IRGP4050 .

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