All IGBT Datasheet

 

IRGP4066-E IGBT (IC) Datasheet. Cross Reference Search. IRGP4066-E Equivalent

Type Designator: IRGP4066-E

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 454W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.10V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 140A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247AD

IRGP4066-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4066-E PDF doc:

5.1. irgp450ud2.pdf Size:41K _international_rectifier

IRGP4066-E
IRGP4066-E

Preliminary Data Sheet PD - 9.1065 IRGP450UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Co-packaged IGBTs are

5.2. irgp420u.pdf Size:109K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.781 IRGP420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 7.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have high

5.3. irgp430u.pdf Size:108K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 15A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have highe

5.4. irgp450lc.pdf Size:159K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.1231 IRFP450LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.5. irgp440ud2.pdf Size:213K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 22A E n-channel Description C

5.6. irgp450u.pdf Size:106K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have hi

5.7. irgp440u.pdf Size:108K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.779 IRGP440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C • Switching-loss rating includes all "tail" losses VCES = 500V • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have highe

5.8. irgp460lc.pdf Size:154K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.1232 IRFP460LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.9. irgp430ud2.pdf Size:207K _international_rectifier

IRGP4066-E
IRGP4066-E

PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 15A E n-channel Description

See also transistors datasheet: IRGP35B60PD-E , IRGP4050 , IRGP4062D , IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , GT60M101 , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 .

Search Terms:

 IRGP4066-E - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRGP4066-E
  IRGP4066-E
  IRGP4066-E
  IRGP4066-E
 
IRGP4066-E
  IRGP4066-E
  IRGP4066-E
  IRGP4066-E
 

social 

LIST

Last Update

IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

Enter a full or partial SMD code with a minimum of 2 letters or numbers