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IRGP4069 IGBT (IC) Datasheet. Cross Reference Search. IRGP4069 Equivalent

Type Designator: IRGP4069

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 268W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.85V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 76A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247

IRGP4069 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4069 PDF doc:

1.1. irgp4069d-e.pdf Size:309K _igbt_a

IRGP4069
IRGP4069

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

1.2. irgp4069.pdf Size:268K _igbt_a

IRGP4069
IRGP4069

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

1.3. irgp4069-e.pdf Size:268K _igbt_a

IRGP4069
IRGP4069

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

1.4. irgp4069d.pdf Size:309K _igbt_a

IRGP4069
IRGP4069

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

See also transistors datasheet: IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRG4PC50F , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U , IRGPS40B120UD .

Search Terms:

 IRGP4069 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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