IGBT Datasheet



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IRGP4086
  IRGP4086
  IRGP4086
  IRGP4086
 
IRGP4086
  IRGP4086
  IRGP4086
  IRGP4086
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..APT60GT60BR
APT60GT60JR ..APTGF90TDU60P
APTGF90X60E3 ..AUIRGS14C40L
AUIRGS30B60K ..G12N60C3D
G12N60D1 ..GT50M101
GT50Q101 ..HGTD3N60B3S
HGTD3N60C3 ..HGTP3N60B3D
HGTP3N60C3 ..IKU15N60R
IKW03N120H2 ..IRG4PC50U
IRG4PC50UD ..IRGP30B120KD-E
IRGP30B60KD-E ..IXBX64N250
IXBX75N170 ..IXGH12N100A
IXGH12N100AU1 ..IXGH36N60B3
IXGH36N60B3C1 ..IXGM17N100
IXGM17N100A ..IXGR48N60C3D1
IXGR50N160H1 ..IXGX100N170
IXGX120N120A3 ..IXSN55N120A
IXSN55N120AU1 ..MGP15N43CL
MGP15N60U ..MIXA40W1200TML
MIXA40W1200TML ..MWI50-12E6K
MWI50-12E7 ..RJP30E2DPP-M0
RJP30E3DPP-M0 ..SGR6N60UF
SGS10N60RUF ..SKM400GA062D
SKM400GA123D ..SNG201025
SNG20620A ..STGPL6NC60D
STGPL6NC60DI ..VWI35-06P1
 
IRGP4086 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

IRGP4086 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IRGP4086

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 160W

Maximum collector-emitter voltage |Uce|, V: 300V

Collector-emitter saturation voltage |Ucesat|, V: 2.10V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 70A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IRGP4086 - Cross-Reference Search

IRGP4086 PDF doc:

5.1. irgp450ud2.pdf Size:41K _international_rectifier

IRGP4086
IRGP4086
Preliminary Data Sheet PD - 9.1065 IRGP450UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. O-247AC T Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25C Continuous Collector Current 59 IC @ TC = 100C Continuous Collector Current 33 ICM Pulsed Collector Current 120 A ILM Clamped Inductive Load Current 120 IF @ TC = 100C Diode Continuous Forw

5.2. irgp450u.pdf Size:106K _international_rectifier

IRGP4086
IRGP4086
PD - 9.1033A IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.2V G @VGE = 15V, IC = 33A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25C Continuous Collector Current 59 IC @ TC = 100C Continuous Collector Current 33 A ICM Pulsed Collector Current 120 ILM Clamped Inductive Load Current 120 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy 20

5.3. irgp450lc.pdf Size:159K _international_rectifier

IRGP4086
IRGP4086
PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximu

5.4. irgp420u.pdf Size:109K _international_rectifier

IRGP4086
IRGP4086
PD - 9.781 IRGP420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 7.5A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25C Continuous Collector Current 14 IC @ TC = 100C Continuous Collector Current 7.5 A ICM Pulsed Collector Current Q 28 ILM Clamped Inductive Load Current R 28 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy S

5.5. irgp430u.pdf Size:108K _international_rectifier

IRGP4086
IRGP4086
PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 15A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25C Continuous Collector Current 25 IC @ TC = 100C Continuous Collector Current 15 A ICM Pulsed Collector Current Q 50 ILM Clamped Inductive Load Current R 50 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy S 10

5.6. irgp460lc.pdf Size:154K _international_rectifier

IRGP4086
IRGP4086
PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximu

5.7. irgp430ud2.pdf Size:207K _international_rectifier

IRGP4086
IRGP4086
PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 15A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. O-247AC T Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25C Continuous Collector Current 25 IC @ TC = 100C Continuous Collector Current 15 ICM Pulsed Collector Current 50 A ILM Clamped Inductive Load Current 50 IF @ TC = 100C D

5.8. irgp440ud2.pdf Size:213K _international_rectifier

IRGP4086
IRGP4086
PD - 9.1064 IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 22A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. O-247AC T Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25C Continuous Collector Current 40 IC @ TC = 100C Continuous Collector Current 22 ICM Pulsed Collector Current 80 A ILM Clamped Inductive Load Current 80 IF @ TC = 100C Di

5.9. irgp440u.pdf Size:108K _international_rectifier

IRGP4086
IRGP4086
PD - 9.779 IRGP440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT .A=JKHAI C Switching-loss rating includes all "tail" losses VCES = 500V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 3.0V G @VGE = 15V, IC = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 500 V IC @ TC = 25C Continuous Collector Current 40 IC @ TC = 100C Continuous Collector Current 22 A ICM Pulsed Collector Current Q 80 ILM Clamped Inductive Load Current R 80 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy S 15

See also transistors datasheet: IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRG4BC30W , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGS10B60KD .

Keywords

 IRGP4086 Datasheet  IRGP4086 Datenblatt  IRGP4086 RoHS  IRGP4086 Distributor
 IRGP4086 Application Notes  IRGP4086 Component  IRGP4086 Circuit  IRGP4086 Schematic
 IRGP4086 Equivalent  IRGP4086 Cross Reference  IRGP4086 Data Sheet  IRGP4086 Fiche Technique

 

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