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IRGP4086 IGBT (IC) Datasheet. Cross Reference Search. IRGP4086 Equivalent

Type Designator: IRGP4086

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 160W

Maximum collector-emitter voltage |Uce|, V: 300V

Collector-emitter saturation voltage |Ucesat|, V: 2.10V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 70A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247

IRGP4086 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4086 PDF doc:

4.1. irgp4062-e.pdf Size:253K _igbt_a

IRGP4086
IRGP4086

IRGP4062-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 24A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC 5μs, TJ(max) = 175°C • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient E VCE(on) typ. =

4.2. irgp4063-e.pdf Size:272K _igbt_a

IRGP4086
IRGP4086

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-effic

4.3. irgp4066d-e.pdf Size:331K _igbt_a

IRGP4086
IRGP4086

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

4.4. irgp4078d.pdf Size:951K _igbt_a

IRGP4086
IRGP4086

IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C VCES = 600V Features IC = 50A, TC =100°C • Low VCE (ON) Trench IGBT Technology TJ(MAX) = 175°C • Low Switching Losses G • Maximum Junction temperature 175°C VCE(ON) typ. = 1.9V • 5 µs short circuit SOA E • Square RBS

4.5. irgp4069d-e.pdf Size:309K _igbt_a

IRGP4086
IRGP4086

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

4.6. auirgp4062d1.pdf Size:432K _igbt_a

IRGP4086
IRGP4086

AUIRGP4062D1 AUTOMOTIVE GRADE AUIRGP4062D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. E VCE(on) ty

4.7. irgp4068d-e.pdf Size:263K _igbt_a

IRGP4086
IRGP4086

PD - 97250C IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low Switching Losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C

4.8. irgp4062d-e.pdf Size:434K _igbt_a

IRGP4086
IRGP4086

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

4.9. irgp4062d.pdf Size:434K _igbt_a

IRGP4086
IRGP4086

IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA G tSC 5μs, TJ(max) = 175°C • Square RBSOA • 100% of the parts tested for ILM E

4.10. irgp4069.pdf Size:268K _igbt_a

IRGP4086
IRGP4086

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

4.11. irgp4066d.pdf Size:331K _igbt_a

IRGP4086
IRGP4086

PD - 97576 IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4066D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

4.12. irgp4063d1.pdf Size:1407K _igbt_a

IRGP4086
IRGP4086

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C G IC = 60A, TC =100°C G tSC 5µs, TJ(max) = 175°C G E VCE(ON) typ. = 1.65V @ IC = 48A E C C E G G n-channel Applica ons  IRGP4063D1PbF  IRGP4063D1‐EPbF  • Industrial Motor Drive  G C E • Inverters  • UPS Gate Collecto

4.13. irgp4063d.pdf Size:782K _igbt_a

IRGP4086
IRGP4086

PD - 97210 IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 µS short circuit SOA • Square RBSOA G tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated current (ILM) • P

4.14. auirgp4066d1.pdf Size:363K _igbt_a

IRGP4086
IRGP4086

AUIRGP4066D1 AUTOMOTIVE GRADE AUIRGP4066D1-E INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE Features IC(Nominal) = 75A • Low VCE (ON) Trench IGBT Technology • Low switching losses G tSC ≥ 5μs, TJ(max) = 175°C • Maximum Junction temperature 175 °C • 5 μS short circuit SOA E VCE(on) typ. = 1.70V • Square RBSOA n-channel • 100

4.15. irgp4063.pdf Size:272K _igbt_a

IRGP4086
IRGP4086

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low switching losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-effic

4.16. irgp4069-e.pdf Size:268K _igbt_a

IRGP4086
IRGP4086

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

4.17. irgp4068d.pdf Size:263K _igbt_a

IRGP4086
IRGP4086

PD - 97250C IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features • Low VCE (ON) Trench IGBT Technology C VCES = 600V • Low Switching Losses • Maximum Junction temperature 175 °C IC = 48A, TC = 100°C • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C

4.18. irgp4072d.pdf Size:356K _igbt_a

IRGP4086
IRGP4086

PD - 97317 IRGP4072DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology C • Low switching losses • Maximum Junction temperature 150 °C VCES = 300V • Square RBSOA • 100% of the parts tested for clamped inductive load IC = 40A, TC = 100°C • Ultra fast soft Recovery Co-Pak Diode G • Tight parameter dist

4.19. irgp4066.pdf Size:284K _igbt_a

IRGP4086
IRGP4086

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

4.20. irgp4066-e.pdf Size:284K _igbt_a

IRGP4086
IRGP4086

PD - 97577 IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 75A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

4.21. irgp4069d.pdf Size:309K _igbt_a

IRGP4086
IRGP4086

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

4.22. auirgp4062d.pdf Size:314K _igbt_a

IRGP4086
IRGP4086

PD - 96353A AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features IC = 24A, TC = 100°C • Low VCE (on) Trench IGBT Technology • Low Switching Losses G tSC ≥ 5μs, TJ(max) = 175°C • 5μs SCSOA • Square RBSOA E VCE(on) typ. = 1.60V • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Co

4.23. auirgp4063d.pdf Size:337K _igbt_a

IRGP4086
IRGP4086

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100°C • Low switching losses • Maximum Junction temperature 175 °C G tSC 5μs, TJ(max) = 175°C • 5 μS short circuit SOA • Square RBSOA E VCE(on) typ. = 1.6V • 100% of the

See also transistors datasheet: IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IRGP4069 , IRGP4069D , IRGP4072D , IRG4BC30W , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGS10B60KD .

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