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IRGR3B60KD2 IGBT (IC) Datasheet. Cross Reference Search. IRGR3B60KD2 Equivalent

Type Designator: IRGR3B60KD2

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 52W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 7.8A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D-Pak

IRGR3B60KD2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGR3B60KD2 PDF doc:

1.1. irgr3b60kd2.pdf Size:256K _international_rectifier

IRGR3B60KD2
IRGR3B60KD2

PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 4.2A, TC=100C 10s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient. E VCE(on) typ

1.2. irgr3b60kd2.pdf Size:260K _igbt

IRGR3B60KD2
IRGR3B60KD2

PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 4.2A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficie

See also transistors datasheet: IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRG4PC50FD , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K .

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IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

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