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IRGS10B60KD IGBT (IC) Datasheet. Cross Reference Search. IRGS10B60KD Equivalent

Type Designator: IRGS10B60KD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 104W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 22A

Maximum junction temperature (Tj), °C:

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D2Pak

IRGS10B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGS10B60KD PDF doc:

1.1. irgs10b60kd.pdf Size:312K _international_rectifier

IRGS10B60KD
IRGS10B60KD

PD - 94382C IRGB10B60KD IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 12A, TC=100C 10s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10s, TJ=150C Positive VCE (on) Temperature Co

1.2. irgs10b60kd.pdf Size:111K _igbt

IRGS10B60KD
IRGS10B60KD

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 12A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive V

5.1. irgs14b40l.pdf Size:50K _international_rectifier

IRGS10B60KD
IRGS10B60KD

L IRGS14B40L INSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped 400V IGBT Co l l ect o r Rg Gat e Rg e 2 Em it te r D Pak MIN TYP MAX UNITS CONDITIONS VCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7A VECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE 24 30 V Ic = -10mA, 25 C VGE(TH) GATE - EMITTER THRESHOLD VOLTAGE 0.75 1.8 2.2 V Ic = 1 mA IC25 CONTINUOUS C

5.2. irgs14c40l.pdf Size:155K _international_rectifier

IRGS10B60KD
IRGS10B60KD

IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector CES = C C CE(on) R1 Gate R2 L(min)

5.3. irgs15b60kd.pdf Size:319K _international_rectifier

IRGS10B60KD
IRGS10B60KD

PD - 94383B IRGB15B60KD IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA. G tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature C

5.4. irgs15b60k.pdf Size:259K _igbt

IRGS10B60KD
IRGS10B60KD

PD - 96358 IRGS15B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. IC = 15A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. • Positive VCE (on) Temperature Coefficient. tsc > 10µs, TJ=150°C E • Lead-Free n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control.

5.5. irgs14c40l.pdf Size:160K _igbt

IRGS10B60KD
IRGS10B60KD

 IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector • CES = • • C C • • CE(on) R1 • Gate R2 • L(min) •

5.6. irgs15b60kd.pdf Size:332K _igbt

IRGS10B60KD
IRGS10B60KD

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 15A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive V

See also transistors datasheet: IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-E , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGP4086 , IRGS15B60K , IRGS15B60KD , IRGS30B60K , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 .

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