All IGBT. GT5G103 Datasheet

 

GT5G103 IGBT. Datasheet pdf. Equivalent

Type Designator: GT5G103

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 20W

Maximum Collector-Emitter Voltage |Vce|, V: 400V

Collector-Emitter saturation Voltage |Vcesat|, V: 8V

Maximum Gate-Emitter Voltage |Veg|, V: 4.5V

Maximum Collector Current |Ic|, A: 130A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 2000

Package: DP

GT5G103 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT5G103 PDF doc:

5.1. gt5g133_100115.pdf Size:224K _toshiba

GT5G103
GT5G103

GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) Peak collector current: IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage

Datasheet: GT50L101 , GT50M101 , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , IRG4PC40U , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 .

 


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