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GT5G103LB IGBT (IC) Datasheet. Cross Reference Search. GT5G103LB Equivalent

Type Designator: GT5G103LB

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 20W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 8V

Maximum gate-emitter voltage |Ueg|, V: 4.5V

Maximum collector current |Ic|, A: 130A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 2000

Maximum collector capacity (Cc), pF:

Package: DP(LB)

GT5G103LB Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT5G103LB PDF doc:

5.1. gt5g133_100115.pdf Size:224K _toshiba

GT5G103LB
GT5G103LB

GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A) Peak collector current: IC = 130 A (max) Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage

See also transistors datasheet: GT50M101 , GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , FGH60N60SFD , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 .

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