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RJH6086BDPK IGBT (IC) Datasheet. Cross Reference Search. RJH6086BDPK Equivalent

Type Designator: RJH6086BDPK

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.65V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 45A

Maximum junction temperature (Tj), °C:

Rise time, nS: 36

Maximum collector capacity (Cc), pF:

Package: TO3P

RJH6086BDPK Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH6086BDPK PDF doc:

1.1. rjh6086bdpk.pdf Size:91K _igbt

RJH6086BDPK
RJH6086BDPK

 Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features  Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)  Low on-state voltage  Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. G

2.1. r07ds0470ej_rjh6086bpk.pdf Size:94K _renesas

RJH6086BDPK
RJH6086BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features ? Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 ???Inductive Load) ? Low on-state voltage ? Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collect

4.1. r07ds0389ej_rjh6087bdp.pdf Size:106K _renesas

RJH6086BDPK
RJH6086BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 ?, Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Coll

4.2. r07ds0390ej_rjh6088bdp.pdf Size:107K _renesas

RJH6086BDPK
RJH6086BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 ?, Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Coll

4.3. rjh6087bdpk.pdf Size:104K _igbt

RJH6086BDPK
RJH6086BDPK

 Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gat

4.4. rjh6088bdpk.pdf Size:105K _igbt

RJH6086BDPK
RJH6086BDPK

 Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gat

See also transistors datasheet: RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , IRGB14C40L , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK .

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