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GT60J101 IGBT (IC) Datasheet. Cross Reference Search. GT60J101 Equivalent

Type Designator: GT60J101

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 350

Maximum collector capacity (Cc), pF:

Package: TOP3

GT60J101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT60J101 PDF doc:

5.1. gt60j323h_061101.pdf Size:227K _toshiba

GT60J101
GT60J101

GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Unit: mm Induction Heating Cooking Appliances Induction Heating Appliances • Enhancement mode type • High speed : tf = 0.12 ?s (typ.) (IC = 60A) • Low saturation voltage: VCE (sat) = 2.1 V (typ.) (IC = 60A) • FRD included between emitter and coll

5.2. gt60j323_061101.pdf Size:175K _toshiba

GT60J101
GT60J101

GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application Unit: mm • Enhancement mode type • High speed : tf = 0.16 ?s (typ.) (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) • FRD included between emitter and collector • Fourth generation IGBT • TO-3P(LH) (Toshiba package name)

5.3. apt60gt60jr.pdf Size:30K _apt

GT60J101
GT60J101

APT60GT60JR 600V 90A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. "UL Recognized" ISOTOP® • Low Forward Voltage Drop • High Freq. Switching to 150KHz C • Low Tail Current • Ultra Low Leakage Current • Avalanche

5.4. apt60gt60jrd.pdf Size:75K _apt

GT60J101
GT60J101

APT60GT60JRD 600V 90A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and ultrafast switching speed. "UL Recognized" ISOTOP® • Low Forward Voltage Drop • High Freq. Swi

See also transistors datasheet: GT50Q101 , GT50S101 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , RJP30E2DPP-M0 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 .

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 GT60J101 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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