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RJH60M3DPP-M0 IGBT (IC) Datasheet. Cross Reference Search. RJH60M3DPP-M0 Equivalent

Type Designator: RJH60M3DPP-M0

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.8V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 35A

Maximum junction temperature (Tj), °C:

Rise time, nS: 80

Maximum collector capacity (Cc), pF:

Package: TO220FL

RJH60M3DPP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH60M3DPP-M0 PDF doc:

1.1. r07ds0532ej_rjh60m3dpp.pdf Size:54K _renesas

RJH60M3DPP-M0
RJH60M3DPP-M0

Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

1.2. r07ds0533ej_rjh60m3dpe.pdf Size:41K _renesas

RJH60M3DPP-M0
RJH60M3DPP-M0

Preliminary Datasheet RJH60M3DPE R07DS0533EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

1.3. r07ds0534ej_rjh60m3dpq.pdf Size:53K _renesas

RJH60M3DPP-M0
RJH60M3DPP-M0

Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

1.4. rjh60m3dpe.pdf Size:97K _igbt

RJH60M3DPP-M0
RJH60M3DPP-M0

 Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300 600V - 17A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (90 ns typ.) in one package  Trench gate and thin wafer technol

1.5. rjh60m3dpq-a0.pdf Size:50K _igbt

RJH60M3DPP-M0
RJH60M3DPP-M0

Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

1.6. rjh60m3dpp-m0.pdf Size:102K _igbt

RJH60M3DPP-M0
RJH60M3DPP-M0

 Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300 600V - 17A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (90 ns typ.) in one package  Trench gate and thin wafer tech

See also transistors datasheet: RJH60F6DPQ-A0 , RJH60F7DPQ-A0 , RJH60M0DPQ-A0 , RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , GT30J322 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD .

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