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RJH60M6DPQ-A0 IGBT (IC) Datasheet. Cross Reference Search. RJH60M6DPQ-A0 Equivalent

Type Designator: RJH60M6DPQ-A0

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 80A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 80

Maximum Collector Capacity (Cc), pF:

Package: TO247A

RJH60M6DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH60M6DPQ-A0 PDF doc:

1.1. r07ds0537ej_rjh60m6dpq.pdf Size:53K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M6DPQ-A0 R07DS0537EJ0100 600 V - 40 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

1.2. rjh60m6dpq-a0.pdf Size:54K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M6DPQ-A0 R07DS0537EJ0100 600 V - 40 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

4.1. r07ds0531ej_rjh60m2dpe.pdf Size:53K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0100 600 V - 12 A - IGBT Rev.1.00 Application: Inverter Aug 30, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

4.2. r07ds0530ej_rjh60m2dpp.pdf Size:54K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0100 600 V - 12 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

4.3. r07ds0528ej_rjh60m1dpp.pdf Size:54K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

4.4. r07ds0538ej_rjh60m7dpq.pdf Size:53K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M7DPQ-A0 R07DS0538EJ0100 600 V - 50 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

4.5. r07ds0536ej_rjh60m5dpq.pdf Size:53K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M5DPQ-A0 R07DS0536EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

4.6. r07ds0532ej_rjh60m3dpp.pdf Size:54K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

4.7. r07ds0533ej_rjh60m3dpe.pdf Size:41K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M3DPE R07DS0533EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

4.8. r07ds0534ej_rjh60m3dpq.pdf Size:53K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

4.9. r07ds0535ej_rjh60m0dpq.pdf Size:53K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M0DPQ-A0 R07DS0535EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

4.10. r07ds0529ej_rjh60m1dpe.pdf Size:53K _renesas

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High sp

4.11. rjh60m1dpp-m0.pdf Size:102K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

 Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300 600V - 8A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (75 ns typ.) in one package  Trench gate and thin wafer techno

4.12. rjh60m2dpp-m0.pdf Size:101K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

 Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300 600V - 12A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (85 ns typ.) in one package  Trench gate and thin wafer tech

4.13. rjh60m7dpq-a0.pdf Size:54K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M7DPQ-A0 R07DS0538EJ0100 600 V - 50 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

4.14. rjh60m3dpe.pdf Size:97K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

 Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300 600V - 17A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (90 ns typ.) in one package  Trench gate and thin wafer technol

4.15. rjh60m5dpq-a0.pdf Size:54K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M5DPQ-A0 R07DS0536EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

4.16. rjh60m3dpq-a0.pdf Size:50K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

4.17. rjh60m1dpe.pdf Size:97K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

 Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300 600V - 8A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technolo

4.18. rjh60m0dpq-a0.pdf Size:50K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

Preliminary Datasheet RJH60M0DPQ-A0 R07DS0535EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

4.19. rjh60m2dpe.pdf Size:96K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

 Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300 600V - 12A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (85 ns typ.) in one package  Trench gate and thin wafer technol

4.20. rjh60m3dpp-m0.pdf Size:102K _igbt

RJH60M6DPQ-A0
RJH60M6DPQ-A0

 Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300 600V - 17A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (90 ns typ.) in one package  Trench gate and thin wafer tech

See also transistors datasheet: RJH60M1DPE , RJH60M1DPP-M0 , RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , 20N60C3DR , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 .

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