All IGBT. GT60M102 Datasheet

 

GT60M102 IGBT. Datasheet pdf. Equivalent

Type Designator: GT60M102

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.8V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 400

Package: TOP3

GT60M102 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT60M102 PDF doc:

5.1. gt60m303.pdf Size:420K _toshiba

GT60M102
GT60M102

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25?s (TYP.) FRD : trr = 0.7?s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHAR

Datasheet: GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , IRG4PH50UD , GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 .

 


GT60M102
  GT60M102
  GT60M102
  GT60M102
 
GT60M102
  GT60M102
  GT60M102
  GT60M102
 

social 

LIST

Last Update

IGBT: VS-GT75NP120N | VS-GT50TP60N | VS-GT50TP120N | VS-GT400TH60N | VS-GT400TH120U | VS-GT400TH120N | VS-GT300YH120N | VS-GT300FD060N | VS-GT175DA120U | VS-GT140DA60U |

Enter a full or partial SMD code with a minimum of 2 letters or numbers