All IGBT. RJH60T4DPQ-A0 Datasheet

 

RJH60T4DPQ-A0 IGBT. Datasheet pdf. Equivalent

Type Designator: RJH60T4DPQ-A0

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7V

Maximum Collector Current |Ic|, A: 60A

Rise Time, nS: 72

Package: TO247A

RJH60T4DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH60T4DPQ-A0 说明书

1.1. r07ds0460ej_rjh60t4dpq.pdf Size:89K _renesas

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Preliminary Datasheet RJH60T4DPQ-A0 R07DS0460EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Jun 15, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package co

1.2. rjh60t4dpq-a0.pdf Size:79K _igbt

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 Preliminary Datasheet RJH60T4DPQ-A0 R07DS0460EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Jun 15, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching Outline RENESA

5.1. r07ds0531ej_rjh60m2dpe.pdf Size:53K _renesas

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Preliminary Datasheet RJH60M2DPE R07DS0531EJ0100 600 V - 12 A - IGBT Rev.1.00 Application: Inverter Aug 30, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

5.2. r07ds0175ej_rjh60d6dpm.pdf Size:84K _renesas

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Preliminary Datasheet RJH60D6DPM R07DS0175EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.3. r07ds0530ej_rjh60m2dpp.pdf Size:54K _renesas

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Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0100 600 V - 12 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.4. r07ds0176ej_rjh60d7dpm.pdf Size:84K _renesas

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Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.5. r07ds0327ej_rjh60f6dpq.pdf Size:90K _renesas

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Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 74 ns typ. (at IC = 30 A,

5.6. r07ds0326ej_rjh60f5dpq.pdf Size:88K _renesas

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Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VC

5.7. r07ds0164ej_rjh60d6dpk.pdf Size:83K _renesas

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Preliminary Datasheet RJH60D6DPK R07DS0164EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.8. r07ds0157ej_rjh60d1dpe.pdf Size:81K _renesas

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Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.9. r07ds0528ej_rjh60m1dpp.pdf Size:54K _renesas

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Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

5.10. r07ds0470ej_rjh6086bpk.pdf Size:94K _renesas

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Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features ? Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 ???Inductive Load) ? Low on-state voltage ? Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collect

5.11. r07ds0538ej_rjh60m7dpq.pdf Size:53K _renesas

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Preliminary Datasheet RJH60M7DPQ-A0 R07DS0538EJ0100 600 V - 50 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.12. r07ds0536ej_rjh60m5dpq.pdf Size:53K _renesas

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Preliminary Datasheet RJH60M5DPQ-A0 R07DS0536EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.13. r07ds0165ej_rjh60d7dpk.pdf Size:83K _renesas

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Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.14. r07ds0527ej_rjh60d5dpq.pdf Size:85K _renesas

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Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.15. r07ds0532ej_rjh60m3dpp.pdf Size:54K _renesas

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Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.16. r07ds0537ej_rjh60m6dpq.pdf Size:53K _renesas

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Preliminary Datasheet RJH60M6DPQ-A0 R07DS0537EJ0100 600 V - 40 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.17. r07ds0547ej_rjh60d7adp.pdf Size:87K _renesas

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Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0100 600 V - 50 A - IGBT Rev.1.00 Application: Inverter Sep 28, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.18. r07ds0236ej_rjh60f6dpk.pdf Size:86K _renesas

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Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous: REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching t

5.19. r07ds0389ej_rjh6087bdp.pdf Size:106K _renesas

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Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 ?, Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Coll

5.20. r07ds0158ej_rjh60d1dpp.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology

5.21. r07ds0533ej_rjh60m3dpe.pdf Size:41K _renesas

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Preliminary Datasheet RJH60M3DPE R07DS0533EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

5.22. r07ds0163ej_rjh60d5dpk.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.23. r07ds0155ej_rjh60d0dpk.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.24. rej03g1838_rjh60c9dpdds.pdf Size:184K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.25. r07ds0159ej_rjh60d2dpe.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.26. r07ds0237ej_rjh60f7adp.pdf Size:85K _renesas

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Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous: REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching

5.27. r07ds0534ej_rjh60m3dpq.pdf Size:53K _renesas

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Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.28. r07ds0390ej_rjh6088bdp.pdf Size:107K _renesas

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Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 ?, Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Coll

5.29. r07ds0235ej_rjh60f4dpk.pdf Size:87K _renesas

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Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous: REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf

5.30. r07ds0324ej_rjh60f0dpq.pdf Size:89K _renesas

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Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A,

5.31. r07ds0156ej_rjh60d0dpm.pdf Size:83K _renesas

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Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.32. r07ds0535ej_rjh60m0dpq.pdf Size:53K _renesas

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Preliminary Datasheet RJH60M0DPQ-A0 R07DS0535EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.33. r07ds0325ej_rjh60f4dpq.pdf Size:82K _renesas

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Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 80 ns typ. (at IC = 30 A, V

5.34. r07ds0391ej_rjh60f3dpq.pdf Size:89K _renesas

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Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 92 ns typ. (at IC = 30 A, VCE

5.35. r07ds0160ej_rjh60d2dpp.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology

5.36. r07ds0234ej_rjh60f0dpk.pdf Size:89K _renesas

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Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A,

5.37. r07ds0162ej_rjh60d3dpp.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Mar 09, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology

5.38. r07ds0199ej_rjh60f3dpk.pdf Size:88K _renesas

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Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 92 ns typ. (at IC = 30 A, VCE

5.39. r07ds0529ej_rjh60m1dpe.pdf Size:53K _renesas

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Preliminary Datasheet RJH60M1DPE R07DS0529EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High sp

5.40. r07ds0328ej_rjh60f7dpq.pdf Size:89K _renesas

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Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 74 ns typ. (at IC

5.41. r07ds0174ej_rjh60d5dpm.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100 Silicon N Channel IGBT Rev.1.00 Application: Inverter Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.42. r07ds0161ej_rjh60d3dpe.pdf Size:82K _renesas

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Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400 Silicon N Channel IGBT Rev.4.00 Application: Inverter Mar 09, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.43. r07ds0055ej_rjh60f5dpk.pdf Size:85K _renesas

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Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VC

5.44. r07ds0526ej_rjh60d0dpq.pdf Size:85K _renesas

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Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.45. rjh60v2bdpp-m0.pdf Size:100K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60V2BDPP-M0 R07DS0760EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

5.46. rjh60d2dpp-m0.pdf Size:99K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400 600V - 12A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.47. rjh60d3dpp-m0.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0400 600V - 17A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.48. rjh60d2dpp-e0.pdf Size:121K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D2DPP-E0 R07DS0894EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter Nov 01, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.49. rjh60d1dpe.pdf Size:102K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D1DPE R07DS0157EJ0400 600V - 10A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.50. rjh60d0dpk.pdf Size:97K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D0DPK R07DS0155EJ0400 600V - 22A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.51. rjh60m1dpp-m0.pdf Size:102K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0300 600V - 8A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (75 ns typ.) in one package  Trench gate and thin wafer techno

5.52. rjh6087bdpk.pdf Size:104K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features • Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gat

5.53. rjh60d6dpm.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D6DPM R07DS0175EJ0300 600V - 40A - IGBT Rev.3.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.54. rjh60c9dpd.pdf Size:182K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.55. rjh60f7adpk.pdf Size:82K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous: REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed

5.56. rjh60f6dpq-a0.pdf Size:87K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (a

5.57. rjh60v1bdpe.pdf Size:106K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60V1BDPE R07DS0743EJ0200 600 V - 8 A - IGBT Rev.2.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

5.58. rjh6086bdpk.pdf Size:91K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features  Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load)  Low on-state voltage  Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. G

5.59. rjh60v3bdpp-m0.pdf Size:101K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60V3BDPP-M0 R07DS0761EJ0100 600V - 17A - IGBT Rev.1.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

5.60. rjh60d1dpp-e0.pdf Size:120K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D1DPP-E0 R07DS0893EJ0100 600V - 10A - IGBT Rev.1.00 Application: Inverter Nov 01, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (70 ns typ.) in one package  Trench gate and thin wafer tech

5.61. rjh60f3dpq-a0.pdf Size:86K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 92 ns typ. (at IC

5.62. rjh60m2dpp-m0.pdf Size:101K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0300 600V - 12A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (85 ns typ.) in one package  Trench gate and thin wafer tech

5.63. rjh60f7bdpq-a0.pdf Size:93K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100 600V - 50A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (at

5.64. rjh60a83rdpe.pdf Size:110K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200 600V - 10A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 130 ns

5.65. rjh60v3bdpe.pdf Size:96K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60V3BDPE R07DS0745EJ0200 600V - 17A - IGBT Rev.2.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

5.66. rjh60a85rdpp-m0.pdf Size:120K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200 600V - 15A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 160

5.67. rjh60m7dpq-a0.pdf Size:54K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M7DPQ-A0 R07DS0538EJ0100 600 V - 50 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.68. rjh60f0dpk.pdf Size:86K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at

5.69. rjh60f4dpk.pdf Size:84K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous: REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed sw

5.70. rjh60d5dpm.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D5DPM R07DS0174EJ0200 600V - 37A - IGBT Rev.2.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.71. rjh60a85rdpe.pdf Size:111K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200 600V - 15A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 160 ns

5.72. rjh6088bdpk.pdf Size:105K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features • Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Inductive Load) • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gat

5.73. rjh60d7bdpq-e0.pdf Size:125K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D7BDPQ-E0 R07DS0795EJ0200 600V - 50A - IGBT Rev.2.00 Application: Inverter Jul 13, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer tec

5.74. rjh60m3dpe.pdf Size:97K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60M3DPE R07DS0533EJ0300 600V - 17A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (90 ns typ.) in one package  Trench gate and thin wafer technol

5.75. rjh60f5dpk.pdf Size:82K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tr = 85 ns typ. (at I

5.76. rjh60f4dpq-a0.pdf Size:87K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns typ. (at

5.77. rjh60d7dpm.pdf Size:110K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400 600V - 50A - IGBT Rev.4.00 Application: Inverter Dec 07, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.78. rjh60d2dpe.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D2DPE R07DS0159EJ0400 600V - 12A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.79. rjh60d1dpp-m0.pdf Size:93K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0400 600V - 10A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (70 ns typ.) in one package  Trench gate and thin wafer tech

5.80. rjh60m5dpq-a0.pdf Size:54K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M5DPQ-A0 R07DS0536EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.81. rjh60f3dpk.pdf Size:85K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 92 ns typ. (at IC

5.82. rjh60m3dpq-a0.pdf Size:50K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.83. rjh60f6bdpq-a0.pdf Size:93K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100 600V - 45A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (at

5.84. rjh60a83rdpp-m0.pdf Size:119K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200 600V - 10A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 130

5.85. rjh60d6dpk.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D6DPK R07DS0164EJ0400 600V - 40A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.86. rjh60m1dpe.pdf Size:97K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60M1DPE R07DS0529EJ0300 600V - 8A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technolo

5.87. rjh60d7dpq-e0.pdf Size:104K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100 600V - 50A - IGBT Rev.1.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.88. rjh60d7adpk.pdf Size:105K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0200 600V - 50A - IGBT Rev.2.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techn

5.89. rjh60d3dpe.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D3DPE R07DS0161EJ0500 600V - 17A - IGBT Rev.5.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.90. rjh60v2bdpe.pdf Size:95K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60V2BDPE R07DS0744EJ0100 600V - 12A - IGBT Rev.1.00 Application: Inverter Apr 25, 2012 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techno

5.91. rjh60d0dpm.pdf Size:97K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D0DPM R07DS0156EJ0300 600V - 22A - IGBT Rev.3.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.92. rjh60d7dpk.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400 600V - 50A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.93. rjh60d5dpk.pdf Size:98K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D5DPK R07DS0163EJ0400 600V - 37A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer techno

5.94. rjh60f0dpq-a0.pdf Size:86K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at

5.95. rjh60d5dpq-a0.pdf Size:82K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer t

5.96. rjh60m0dpq-a0.pdf Size:50K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M0DPQ-A0 R07DS0535EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.97. rjh60m6dpq-a0.pdf Size:54K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M6DPQ-A0 R07DS0537EJ0100 600 V - 40 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer tec

5.98. rjh60f6dpk.pdf Size:83K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous: REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed s

5.99. rjh60m2dpe.pdf Size:96K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60M2DPE R07DS0531EJ0300 600V - 12A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (85 ns typ.) in one package  Trench gate and thin wafer technol

5.100. rjh60f7dpq-a0.pdf Size:86K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns

5.101. rjh60f5bdpq-a0.pdf Size:92K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F5BDPQ-A0 R07DS0631EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 68 ns typ. (at IC

5.102. rjh60f5dpq-a0.pdf Size:85K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tr = 85 ns typ. (at I

5.103. rjh60d0dpq-a0.pdf Size:82K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer t

5.104. rjh60m3dpp-m0.pdf Size:102K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0300 600V - 17A - IGBT Rev.3.00 Application: Inverter May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (90 ns typ.) in one package  Trench gate and thin wafer tech

5.105. rjh60v1bdpp-m0.pdf Size:110K _igbt

RJH60T4DPQ-A0
RJH60T4DPQ-A0

 Preliminary Datasheet RJH60V1BDPP-M0 R07DS0759EJ0100 600V - 8A - IGBT Rev.1.00 Application: Inverter May 25, 2011 Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer techn

Datasheet: RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , STGB10NB37LZ , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE .

 


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