All IGBT Datasheet

 

RJH60T4DPQ-A0 IGBT (IC) Datasheet. Cross Reference Search. RJH60T4DPQ-A0 Equivalent

Type Designator: RJH60T4DPQ-A0

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C:

Rise time, nS: 72

Maximum collector capacity (Cc), pF:

Package: TO247A

RJH60T4DPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH60T4DPQ-A0 PDF doc:

1.1. r07ds0460ej_rjh60t4dpq.pdf Size:89K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60T4DPQ-A0 R07DS0460EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Jun 15, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package co

5.1. r07ds0531ej_rjh60m2dpe.pdf Size:53K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M2DPE R07DS0531EJ0100 600 V - 12 A - IGBT Rev.1.00 Application: Inverter Aug 30, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

5.2. r07ds0175ej_rjh60d6dpm.pdf Size:84K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D6DPM R07DS0175EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.3. r07ds0530ej_rjh60m2dpp.pdf Size:54K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M2DPP-M0 R07DS0530EJ0100 600 V - 12 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.4. r07ds0176ej_rjh60d7dpm.pdf Size:84K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.5. r07ds0327ej_rjh60f6dpq.pdf Size:90K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 74 ns typ. (at IC = 30 A,

5.6. r07ds0326ej_rjh60f5dpq.pdf Size:88K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F5DPQ-A0 R07DS0326EJ0200 600 V - 40 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VC

5.7. r07ds0164ej_rjh60d6dpk.pdf Size:83K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D6DPK R07DS0164EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.8. r07ds0157ej_rjh60d1dpe.pdf Size:81K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D1DPE R07DS0157EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.9. r07ds0528ej_rjh60m1dpp.pdf Size:54K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M1DPP-M0 R07DS0528EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

5.10. r07ds0470ej_rjh6086bpk.pdf Size:94K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100 600 V - 45 A - IGBT Rev.1.00 High Speed Power Switching Sep 28, 2011 Features ? Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 ???Inductive Load) ? Low on-state voltage ? Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collect

5.11. r07ds0538ej_rjh60m7dpq.pdf Size:53K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M7DPQ-A0 R07DS0538EJ0100 600 V - 50 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.12. r07ds0536ej_rjh60m5dpq.pdf Size:53K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M5DPQ-A0 R07DS0536EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.13. r07ds0165ej_rjh60d7dpk.pdf Size:83K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.14. r07ds0527ej_rjh60d5dpq.pdf Size:85K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D5DPQ-A0 R07DS0527EJ0100 600 V - 37 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.15. r07ds0532ej_rjh60m3dpp.pdf Size:54K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M3DPP-M0 R07DS0532EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.16. r07ds0537ej_rjh60m6dpq.pdf Size:53K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M6DPQ-A0 R07DS0537EJ0100 600 V - 40 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.17. r07ds0547ej_rjh60d7adp.pdf Size:87K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0100 600 V - 50 A - IGBT Rev.1.00 Application: Inverter Sep 28, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.18. r07ds0236ej_rjh60f6dpk.pdf Size:86K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous: REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching t

5.19. r07ds0389ej_rjh6087bdp.pdf Size:106K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 ?, Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Coll

5.20. r07ds0158ej_rjh60d1dpp.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D1DPP-M0 R07DS0158EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology

5.21. r07ds0533ej_rjh60m3dpe.pdf Size:41K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M3DPE R07DS0533EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High

5.22. r07ds0163ej_rjh60d5dpk.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D5DPK R07DS0163EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.23. r07ds0155ej_rjh60d0dpk.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D0DPK R07DS0155EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.24. rej03g1838_rjh60c9dpdds.pdf Size:184K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.25. r07ds0159ej_rjh60d2dpe.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D2DPE R07DS0159EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.26. r07ds0237ej_rjh60f7adp.pdf Size:85K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous: REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching

5.27. r07ds0534ej_rjh60m3dpq.pdf Size:53K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M3DPQ-A0 R07DS0534EJ0100 600 V - 17 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.28. r07ds0390ej_rjh6088bdp.pdf Size:107K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 11, 2011 Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 ?, Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Coll

5.29. r07ds0235ej_rjh60f4dpk.pdf Size:87K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 (Previous: REJ03G1835-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 17, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf

5.30. r07ds0324ej_rjh60f0dpq.pdf Size:89K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A,

5.31. r07ds0156ej_rjh60d0dpm.pdf Size:83K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D0DPM R07DS0156EJ0200 Silicon N Channel IGBT Rev.2.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.32. r07ds0535ej_rjh60m0dpq.pdf Size:53K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M0DPQ-A0 R07DS0535EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? Hi

5.33. r07ds0325ej_rjh60f4dpq.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F4DPQ-A0 R07DS0325EJ0200 600 V - 30 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 80 ns typ. (at IC = 30 A, V

5.34. r07ds0391ej_rjh60f3dpq.pdf Size:89K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F3DPQ-A0 R07DS0391EJ0200 600 V - 20 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 92 ns typ. (at IC = 30 A, VCE

5.35. r07ds0160ej_rjh60d2dpp.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology

5.36. r07ds0234ej_rjh60f0dpk.pdf Size:89K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F0DPK R07DS0234EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Mar 30, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A,

5.37. r07ds0162ej_rjh60d3dpp.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D3DPP-M0 R07DS0162EJ0300 Silicon N Channel IGBT Rev.3.00 Application: Inverter Mar 09, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology

5.38. r07ds0199ej_rjh60f3dpk.pdf Size:88K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F3DPK R07DS0199EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Dec 01, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 92 ns typ. (at IC = 30 A, VCE

5.39. r07ds0529ej_rjh60m1dpe.pdf Size:53K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60M1DPE R07DS0529EJ0100 600 V - 8 A - IGBT Rev.1.00 Application: Inverter Sep 02, 2011 Features ? Short circuit withstand time (8 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ? High sp

5.40. r07ds0328ej_rjh60f7dpq.pdf Size:89K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 74 ns typ. (at IC

5.41. r07ds0174ej_rjh60d5dpm.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D5DPM R07DS0174EJ0100 Silicon N Channel IGBT Rev.1.00 Application: Inverter Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.42. r07ds0161ej_rjh60d3dpe.pdf Size:82K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D3DPE R07DS0161EJ0400 Silicon N Channel IGBT Rev.4.00 Application: Inverter Mar 09, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

5.43. r07ds0055ej_rjh60f5dpk.pdf Size:85K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60F5DPK R07DS0055EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Nov 24, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tr = 85 ns typ. (at IC = 30 A, VC

5.44. r07ds0526ej_rjh60d0dpq.pdf Size:85K _renesas

RJH60T4DPQ-A0
RJH60T4DPQ-A0

Preliminary Datasheet RJH60D0DPQ-A0 R07DS0526EJ0100 600 V - 22 A - IGBT Rev.1.00 Application: Inverter Aug 26, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode (100 ns typ.) in one package ? Trench gate and thin wafer technology ?

See also transistors datasheet: RJH60M2DPE , RJH60M2DPP-M0 , RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , STGB10NB37LZ , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE .

Search Terms:

 RJH60T4DPQ-A0 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


RJH60T4DPQ-A0
  RJH60T4DPQ-A0
  RJH60T4DPQ-A0
  RJH60T4DPQ-A0
 
RJH60T4DPQ-A0
  RJH60T4DPQ-A0
  RJH60T4DPQ-A0
  RJH60T4DPQ-A0
 

social 

LIST

Last Update

IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

Enter a full or partial SMD code with a minimum of 2 letters or numbers