All IGBT. RJP30E3DPP-M0 Datasheet

 

RJP30E3DPP-M0 IGBT. Datasheet pdf. Equivalent

Type Designator: RJP30E3DPP-M0

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 360V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6V

Maximum Collector Current |Ic|, A: 40A

Rise Time, nS: 150

Package: TO220FL

RJP30E3DPP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP30E3DPP-M0 PDF doc:

1.1. r07ds0353ej_rjp30e3dpp.pdf Size:190K _renesas

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 ?A max Isolated package TO-220FL Outline RENESAS Package code: PRSS

1.2. rjp30e3dpp-m0.pdf Size:160K _igbt

RJP30E3DPP-M0
RJP30E3DPP-M0

 Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Pack

4.1. r07ds0347ej_rjp30e2dpp.pdf Size:152K _renesas

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 ?A max Isolated package TO-220FL Outline RENESAS Package code: PRSS

4.2. rjp30e2dpp-equivalent_for_rjh30e2_without_diode.pdf Size:152K _renesas

RJP30E3DPP-M0
RJP30E3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 ?A max • Isolated package TO-220FL Outline RENESAS Package

4.3. rjp30e2dpp-m0.pdf Size:149K _igbt

RJP30E3DPP-M0
RJP30E3DPP-M0

 Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Pack

Datasheet: RJH60M3DPE , RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , FII50-12E , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE .

 


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