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RJP30H2DPK-M0 IGBT. Datasheet pdf. Equivalent

Type Designator: RJP30H2DPK-M0

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 360V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.4V

Maximum Collector Current |Ic|, A: 35A

Rise Time, nS: 180

Package: TO3PSG

RJP30H2DPK-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP30H2DPK-M0 PDF doc:

1.1. r07ds0467ej_rjp30h2dpk.pdf Size:160K _renesas

RJP30H2DPK-M0
RJP30H2DPK-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ? High speed switching: tf = 100 ns typ, tf = 180 ns typ ? Low leak current: ICES = 1 ?A max Outline RENESAS Package co

1.2. rjp30h2dpk-m0.pdf Size:129K _igbt

RJP30H2DPK-M0
RJP30H2DPK-M0

 Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ  High speed switching: tf = 100 ns typ, tf = 180 ns typ  Low leak current: ICES = 1 A max Outline RENES

4.1. r07ds0466ej_rjp30h1dpp.pdf Size:151K _renesas

RJP30H2DPK-M0
RJP30H2DPK-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr =80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ? Low leak current: ICES = 1 ?A max. ? Isolated package TO-220FL

4.2. r07ds0465ej_rjp30h1dpd.pdf Size:151K _renesas

RJP30H2DPK-M0
RJP30H2DPK-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr = 80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. ? Low leak current: ICES = 1 ?A max. Outline RENESAS Package co

4.3. rjp30h1dpp-m0.pdf Size:130K _igbt

RJP30H2DPK-M0
RJP30H2DPK-M0

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

4.4. rjp30h1dpd.pdf Size:130K _igbt

RJP30H2DPK-M0
RJP30H2DPK-M0

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

Datasheet: RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , IRGBC20S , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM .

 


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