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RJP30K3DPP-M0 IGBT (IC) Datasheet. Cross Reference Search. RJP30K3DPP-M0 Equivalent

Type Designator: RJP30K3DPP-M0

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 360V

Collector-emitter saturation voltage |Ucesat|, V: 1.1V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C:

Rise time, nS: 250

Maximum collector capacity (Cc), pF:

Package: TO220FL

RJP30K3DPP-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP30K3DPP-M0 PDF doc:

1.1. r07ds0501ej_rjp30k3dpp.pdf Size:93K _renesas

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Jul 05, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? Low collector to emitter saturation voltage VCE(sat) = 1.1V typ ? High speed switching tr = 90 ns typ, tf = 250 ns typ ? Low leak current ICES = 1 ?A max ? Isolated package TO-220FL Out

1.2. rjp30k3dpp-m0.pdf Size:91K _igbt

RJP30K3DPP-M0
RJP30K3DPP-M0

 Preliminary Datasheet RJP30K3DPP-M0 R07DS0501EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Jul 05, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage VCE(sat) = 1.1V typ  High speed switching tr = 90 ns typ, tf = 250 ns typ  Low leak current ICES = 1 A max  Isolated package

5.1. r07ds0347ej_rjp30e2dpp.pdf Size:152K _renesas

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 ?A max Isolated package TO-220FL Outline RENESAS Package code: PRSS

5.2. r07ds0467ej_rjp30h2dpk.pdf Size:160K _renesas

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ ? High speed switching: tf = 100 ns typ, tf = 180 ns typ ? Low leak current: ICES = 1 ?A max Outline RENESAS Package co

5.3. r07ds0466ej_rjp30h1dpp.pdf Size:151K _renesas

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr =80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ? Low leak current: ICES = 1 ?A max. ? Isolated package TO-220FL

5.4. r07ds0353ej_rjp30e3dpp.pdf Size:190K _renesas

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 ?A max Isolated package TO-220FL Outline RENESAS Package code: PRSS

5.5. r07ds0465ej_rjp30h1dpd.pdf Size:151K _renesas

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr = 80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. ? Low leak current: ICES = 1 ?A max. Outline RENESAS Package co

5.6. rjp30e2dpp-equivalent_for_rjh30e2_without_diode.pdf Size:152K _renesas

RJP30K3DPP-M0
RJP30K3DPP-M0

Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 ?A max • Isolated package TO-220FL Outline RENESAS Package

5.7. rjp30h2dpk-m0.pdf Size:129K _igbt

RJP30K3DPP-M0
RJP30K3DPP-M0

 Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ  High speed switching: tf = 100 ns typ, tf = 180 ns typ  Low leak current: ICES = 1 A max Outline RENES

5.8. rjp30e2dpp-m0.pdf Size:149K _igbt

RJP30K3DPP-M0
RJP30K3DPP-M0

 Preliminary Datasheet RJP30E2DPP-M0 R07DS0347EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 12, 2011 Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Pack

5.9. rjp30h1dpp-m0.pdf Size:130K _igbt

RJP30K3DPP-M0
RJP30K3DPP-M0

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

5.10. rjp30e3dpp-m0.pdf Size:160K _igbt

RJP30K3DPP-M0
RJP30K3DPP-M0

 Preliminary Datasheet RJP30E3DPP-M0 R07DS0353EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Apr 15, 2011 Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Pack

5.11. rjp30h1dpd.pdf Size:130K _igbt

RJP30K3DPP-M0
RJP30K3DPP-M0

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

See also transistors datasheet: RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , STGW38IH130D , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 .

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