All IGBT. RJP6065DPM Datasheet

 

RJP6065DPM IGBT. Datasheet pdf. Equivalent

Type Designator: RJP6065DPM

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 630V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8V

Maximum Collector Current |Ic|, A: 40A

Rise Time, nS: 450

Package: TO3PFM

RJP6065DPM Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP6065DPM PDF doc:

1.1. r07ds0204ej_rjp6065dpm.pdf Size:82K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PF

1.2. rjp6065dpm.pdf Size:79K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP6065DPM R07DS0204EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 19, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A (Package

5.1. rej03g1863_rjp6085dpnds.pdf Size:115K _renesas

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.2. r07ds0585ej_rjp60f0dpm.pdf Size:80K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate

5.3. r07ds0540ej_rjp60f0dpe.pdf Size:81K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25C, induct

5.4. r07ds0586ej_rjp60f4dpm.pdf Size:79K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate

5.5. r07ds0173ej_rjp60d0dpp.pdf Size:79K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS

5.6. r07ds0166ej_rjp60d0dpk.pdf Size:78K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pac

5.7. r07ds0088ej_rjp60d0dpm.pdf Size:75K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pack

5.8. rej03g1862_rjp6085dpkds.pdf Size:118K _renesas

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. r07ds0172ej_rjp60d0dpe.pdf Size:77K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pac

5.10. r07ds0587ej_rjp60f5dpm.pdf Size:81K _renesas

RJP6065DPM
RJP6065DPM

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate G

5.11. rjp60d0dpp-m0.pdf Size:76K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Ou

5.12. rjp60f5dpm.pdf Size:75K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200 600V - 40A - IGBT Rev.2.00 High Speed Power Switching May 31, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25

5.13. rjp60d0dpe.pdf Size:74K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outli

5.14. rjp6016jpe.pdf Size:91K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP6016JPE R07DS0878EJ0100 600 V - 40 A- N Channel IGBT Rev.1.00 High Speed Power Switching Sep 19, 2012 Features  For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE(sat) = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )

5.15. rjp60d0dpk.pdf Size:75K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outli

5.16. rjp60f5dpk.pdf Size:77K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching May 31, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Pack

5.17. rjp60d0dpm.pdf Size:72K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and chip bonding Outlin

5.18. rjp60f0dpe.pdf Size:79K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

5.19. rjp6085dpn-00.pdf Size:112K _igbt

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.20. rjp60v0dpm.pdf Size:82K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60V0DPM R07DS0669EJ0100 600V - 22A - IGBT Rev.1.00 Application: Inverter Feb 07, 2012 Features  High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)  Short circuit withstand time (6 s typ.)  Trench gate and thin wafer technology (G6H series) Outline RENES

5.21. rjp6085dpk.pdf Size:115K _igbt

RJP6065DPM
RJP6065DPM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.22. rjp60f0dpm.pdf Size:77K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

5.23. rjp60f4dpm.pdf Size:76K _igbt

RJP6065DPM
RJP6065DPM

 Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100 600 V - 30 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

Datasheet: RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , IRGB20B60PD1 , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 .

 


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