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RJP60D0DPE IGBT (IC) Datasheet. Cross Reference Search. RJP60D0DPE Equivalent

Type Designator: RJP60D0DPE

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 45A

Maximum junction temperature (Tj), °C:

Rise time, nS: 70

Maximum collector capacity (Cc), pF:

Package: LDPAK(S)

RJP60D0DPE Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP60D0DPE PDF doc:

1.1. r07ds0173ej_rjp60d0dpp.pdf Size:79K _renesas

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS

1.2. r07ds0166ej_rjp60d0dpk.pdf Size:78K _renesas

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPK R07DS0166EJ0300 Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jul 13, 2011 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pac

1.3. r07ds0088ej_rjp60d0dpm.pdf Size:75K _renesas

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPM R07DS0088EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 16, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pack

1.4. r07ds0172ej_rjp60d0dpe.pdf Size:77K _renesas

RJP60D0DPE
RJP60D0DPE

Preliminary Datasheet RJP60D0DPE R07DS0172EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Nov 15, 2010 Features ? Short circuit withstand time (5 ?s typ.) ? Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) ? Gate to emitter voltage rating ?30 V ? Pb-free lead plating and chip bonding Outline RENESAS Pac

See also transistors datasheet: RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , SGH80N60UFD , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 .

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