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GT60M103 IGBT (IC) Datasheet. Cross Reference Search. GT60M103 Equivalent

Type Designator: GT60M103

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 900V

Collector-emitter saturation voltage |Ucesat|, V: 3.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 60A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 400

Maximum collector capacity (Cc), pF:

Package: TO264

GT60M103 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT60M103 PDF doc:

5.1. gt60m303.pdf Size:420K _toshiba

GT60M103
GT60M103

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25?s (TYP.) FRD : trr = 0.7?s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHAR

See also transistors datasheet: GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , 1MBH50D-060 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 .

Search Terms:

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