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RJP60F0DPE IGBT (IC) Datasheet. Cross Reference Search. RJP60F0DPE Equivalent

Type Designator: RJP60F0DPE

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C:

Rise time, nS: 90

Maximum collector capacity (Cc), pF:

Package: LDPAK(S)(1)

RJP60F0DPE Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP60F0DPE PDF doc:

1.1. r07ds0585ej_rjp60f0dpm.pdf Size:80K _renesas

RJP60F0DPE
RJP60F0DPE

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate

1.2. r07ds0540ej_rjp60f0dpe.pdf Size:81K _renesas

RJP60F0DPE
RJP60F0DPE

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) ? Trench gate and thin wafer technology ? High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25C, induct

1.3. rjp60f0dpe.pdf Size:79K _igbt

RJP60F0DPE
RJP60F0DPE

 Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

1.4. rjp60f0dpm.pdf Size:77K _igbt

RJP60F0DPE
RJP60F0DPE

 Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C

See also transistors datasheet: RJP30E3DPP-M0 , RJP30H1DPD , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , IKW40N120H3 , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , RJP63K2DPK-M0 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK .

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